Silicon Oxide Film Deposition via Si-O-Si Precursors
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Solution Overview
Problem
Current methods for forming silicon oxide films at low temperatures suffer from impurities like nitrogen, reduced conformality, and less control over film thickness, especially in semiconductor applications, and there is a need for cheaper, more stable silicon precursor compounds that can produce films with high density and tunable properties.
Innovation Solution
A process involving plasma enhanced Atomic Layer Deposition (ALD) or ALD-like processes using silicon precursor compounds with Si-O-Si linkages and organoamino functionalities, along with oxygen-containing sources like ozone or oxygen plasma, to deposit stoichiometric or nonstoichiometric silicon oxide films at temperatures ranging from 25°C to 600°C, achieving high conformality and low impurity levels.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional silicon precursors are used in low temperature deposition, then deposition temperature can be reduced, but film density and purity deteriorate
Solution Approach 1:
The patent changes the chemical parameters of the silicon precursor by introducing Si-O-Si linkages and organoamino functionalities. This molecular structure modification enables the precursor to react effectively at lower temperatures while maintaining film quality, directly resolving the contradiction between low deposition temperature and high film density/purity
Solution Approach 2:
The invention uses composite precursor molecules that combine multiple functional groups (Si-O-Si linkages and organoamino functionalities) into a single precursor structure. This composite approach allows the precursor to provide both low-temperature reactivity and high-quality film formation, simultaneously achieving low deposition temperature and high film density
2Device complexity
If conventional deposition processes are used, then process simplicity is maintained, but conformality and thickness control deteriorate
Solution Approach 1:
The patent implements a cyclic deposition process with periodic introduction of silicon precursor and oxygen-containing source. This periodic action enables precise control over film thickness and conformality through multiple controlled reaction cycles, while maintaining relatively simple process equipment
Solution Approach 2:
The precursor molecules are pre-designed with Si-O-Si linkages that facilitate controlled sequential reactions. This preliminary structural preparation allows the deposition process to proceed with better conformality and thickness control without requiring complex in-situ modifications during deposition
3Ease of manufacture
If conventional silicon precursors are used, then cost is reduced, but film properties and stability deteriorate
Solution Approach 1:
The patent modifies the chemical parameters of the precursor (Si-O-Si linkages, organoamino functionalities) to achieve better film stability and properties. These parameter changes improve film quality while the patent also notes that the modified precursors can be synthesized from readily available materials, maintaining cost-effectiveness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The process results in silicon oxide films with high density, low chemical impurities, and improved conformality, along with the ability to adjust carbon content, meeting the requirements for semiconductor applications with enhanced film properties.
Implementation Method 1
contacting the substrate with a silicon precursor compound and an oxygen-containing source to react and form a silicon oxide film
Implementation Method 2
a chemical vapor deposition (CVD) process
Implementation Method 3
Plasma Enhanced Atomic Layer Deposition (PEALD)
Data Source
AI summary
Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the following Formulae A and B: as defined herein.