Display Pixel Circuit Using Silicon and Oxide TFTs for Low Power
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Solution Overview
Problem
Current display devices face challenges in achieving high integration and low power consumption while accurately controlling light emission and luminescence levels, primarily due to limitations in the design and materials used in thin-film transistors (TFTs).
Innovation Solution
The implementation of a display device structure that incorporates both silicon semiconductor and oxide semiconductor TFTs, along with a specific arrangement of power supply voltage lines, data lines, and capacitors, enhances integration and reduces power consumption by optimizing the electrical connections and layer configurations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the number of TFTs electrically connected to one display element is increased to accurately control light emission and luminescence level, then the control precision is improved, but the device complexity increases
Solution Approach 1:
The pixel circuit is divided into multiple TFTs (first TFT, second TFT, third TFT, fourth TFT) with specialized functions. Each TFT is responsible for specific control tasks (switching, driving, compensation), enabling precise control of light emission and luminescence level while maintaining manageable circuit complexity through functional segmentation.
2Measurement precision
If more TFTs are integrated into the display device to improve control accuracy, then the control precision is improved, but the power consumption increases
Solution Approach 1:
Different TFTs use different semiconductor materials optimized for their specific functions: silicon semiconductor for switching TFTs requiring fast response, and oxide semiconductor for driving TFTs requiring low leakage current. This local optimization enables precise control while minimizing overall power consumption by matching material properties to functional requirements.
3Device complexity
If silicon semiconductor TFTs are used to achieve high integration, then the device complexity is reduced, but the power consumption increases
Solution Approach 1:
The display device employs a composite semiconductor structure combining silicon semiconductor and oxide semiconductor in different TFTs. Silicon semiconductor provides high integration capability and fast switching, while oxide semiconductor provides low leakage current and low power consumption. This composite approach resolves the contradiction between integration degree and power consumption by leveraging the complementary strengths of different semiconductor materials.
Data Source
AI summary
A display device includes a first thin-film transistor (TFT) including a first semiconductor layer including silicon semiconductor and a first gate electrode insulated from the first semiconductor layer, a first interlayer insulating layer covering the first gate electrode, a second TFT arranged on the first interlayer insulating layer and including a second semiconductor layer including oxide semiconductor and a second gate electrode insulated from the second semiconductor layer, a second interlayer insulating layer covering the second gate electrode, a first power supply voltage line arranged on the second interlayer insulating layer, a first planarization layer covering the first power supply voltage line, and a data line arranged on the first planarization layer and at least partially overlapping the first power supply voltage line.