Selective Silicon Oxide Isolation in Organic-Layered Semiconductor Trenches
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Solution Overview
Problem
The challenge of effectively isolating integrated semiconductor devices as they are scaled down requires advanced techniques for electrically isolating devices, particularly in ultra-miniaturized environments.
Innovation Solution
A method of fabricating semiconductor devices involving the formation of a first layer with a metal material, a second layer with an organic material and an acid-precursor, and a third layer of silicon oxide, using precursors with alkoxy groups and silicon to selectively form silicon oxide layers on the second layer without forming on the first layer, thereby creating trenches and isolating structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional deposition methods are used to form silicon oxide layers, then complete coverage is achieved, but unwanted deposition occurs on metal layers where isolation is needed
Solution Approach 1:
An organic layer comprising an acid-precursor and amine is introduced as an intermediary between the metal layer and the silicon precursor. This organic layer selectively generates acid that catalyzes silicon oxide formation only on the organic layer surface, preventing deposition on the metal layer while maintaining complete coverage where needed.
Solution Approach 2:
The invention changes the chemical parameters of the deposition system by introducing an organic layer with specific functional groups (acid-precursor and amine). The acid-precursor generates acid under deposition conditions, creating a localized chemical environment that enables selective silicon oxide formation. This parameter change transforms the deposition process from non-selective to highly selective based on surface chemistry.
2Productivity
If device pitch size is reduced for high integration, then device density increases, but electrical isolation between devices becomes more difficult to achieve
Solution Approach 1:
The invention applies local quality by creating different surface properties in different regions. The organic layer is positioned only where isolation is needed, and the acid-precursor generates acid locally at the organic layer surface. This creates a localized chemical environment that enables silicon oxide formation precisely where required for isolation, without affecting adjacent metal layers or devices.
Solution Approach 2:
The organic layer acts as a spatial mediator that defines the boundaries of silicon oxide deposition. By positioning the organic layer between devices where isolation is needed, the acid generated from the acid-precursor confines silicon oxide formation to specific regions, enabling precise electrical isolation even at reduced pitch sizes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables precise and selective deposition of silicon oxide layers, enhancing device isolation and preventing unwanted deposition on metal layers, thus supporting high integration and quality of semiconductor devices.
Implementation Method 1
forming a silicon oxide layer on the organic layer, wherein the forming of the silicon oxide layer comprises forming a first material comprising a silanol by using hydrogen ions produced from the organic layer and the first precursor
Implementation Method 2
forming a first material comprising a silanol by using hydrogen ions produced from the organic layer and the first precursor
Implementation Method 3
forming a second material comprising siloxane using the first material and the amine of the organic layer
Implementation Method 4
forming a second layer which defines a trench exposing the first surface, has a second surface intersecting the first surface within the trench, and comprises an acid and an organic material
Implementation Method 5
forming a second layer which defines a trench exposing the first surface, has a second surface intersecting the first surface within the trench, and comprises an acid and an organic material
Data Source
AI summary
A method of fabricating a semiconductor device includes forming a first layer which has a first surface, does not contain an acid, and contains a metal material. The method includes forming, on the first layer, a second layer which includes a trench exposing the first surface. The second layer has a second surface intersecting the first surface within the trench, and contains an acid and an organic material. The method further including a first precursor containing an alkoxy group and silicon; and forming a third layer containing silicon oxide on the second surface within the trench. The third layer is in contact with a portion of the first surface within the trench.