Silicon Oxide Film Deposition Rate and Insulation via Underlayer
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Solution Overview
Problem
The increasing complexity and packing density of semiconductor devices lead to longer processing times for silicon oxide film deposition, necessitating a method to reduce this time while maintaining favorable insulation characteristics.
Innovation Solution
Forming an underlayer film containing aluminum or alkaline earth metal atoms followed by depositing a silicon oxide film using CVD or ALD methods with specific silicon sources, which increases the deposition rate and improves insulating properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the area and volume of silicon oxide film usage increase to accommodate finer patterns and greater packing density, then the insulation coverage and device functionality are improved, but the time taken for the silicon oxide film deposition process increases
Solution Approach 1:
The patent changes the chemical parameters of the deposition process by using specific silicon sources (those containing ethoxy groups, halogen groups, alkyl groups, or amino groups, or siloxane systems) to alter the deposition rate characteristics. This allows faster deposition of large-area silicon oxide films while maintaining film quality and insulation properties
Solution Approach 2:
The patent employs composite deposition approaches by combining specific silicon sources with oxygen-containing gases in controlled ratios and conditions, creating optimized deposition processes that achieve both high deposition rates and favorable insulation characteristics in the resulting silicon oxide film
2Productivity
If the deposition rate of silicon oxide film is increased to reduce manufacturing time, then the productivity is improved, but the insulation characteristics and film quality may deteriorate
Solution Approach 1:
The patent optimizes multiple deposition parameters simultaneously - selecting silicon sources with specific chemical groups (ethoxy, halogen, alkyl, amino groups or siloxane systems), controlling oxygen flow rates, adjusting deposition temperature, and regulating pressure conditions - to achieve a synergistic effect that maintains high deposition rates while ensuring favorable insulation characteristics and film quality
Solution Approach 2:
The patent employs periodic or pulsed deposition techniques where the silicon source and oxygen-containing gas are supplied in controlled cycles, allowing for optimal reaction conditions during each phase while maintaining high overall deposition rates and consistent film quality with excellent insulation properties
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the time for manufacturing semiconductor devices by enhancing the deposition rate and insulating characteristics of the silicon oxide film, including a significant reduction in leak current, without degrading other films or increasing costs.
Implementation Method 1
forming a silicon oxide film on the underlayer film by a CVD method or an ALD method
Implementation Method 2
forming a silicon oxide film on the underlayer film by a CVD method or an ALD method
Implementation Method 3
by use of a silicon source containing at least one of an ethoxy group, a halogen group, an alkyl group and an amino group, or a silicon source of a siloxane system
Data Source
AI summary
According to one embodiment, a method for manufacturing a semiconductor device includes: forming an underlayer film that contains atoms selected from the group consisting of aluminum, boron and alkaline earth metal; and forming a silicon oxide film on the underlayer film by a CVD method or an ALD method by use of a silicon source containing at least one of an ethoxy group, a halogen group, an alkyl group and an amino group, or a silicon source of a siloxane system.