Silicon Oxynitride Gradient Substrate for III-V Epitaxy
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Solution Overview
Problem
Existing semiconductor substrates with multilayer structures and complex formation processes lead to increased production costs and defects, reducing yield and reliability due to heterogeneous epitaxial growth processes.
Innovation Solution
A substrate comprising a ceramic core with sequentially formed adhesion and barrier layers of silicon oxynitride, each with distinct oxygen to nitrogen atomic number ratios, and a conductive layer, formed using a chemical vapor deposition process to adjust the flow rate ratio of oxygen to nitrogen sources, simplifying the process and reducing defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a multilayer substrate structure is formed using heterogeneous epitaxial growth process, then the substrate can support III-V semiconductor materials, but the different lattice constants of materials cause defective epitaxial layers
Solution Approach 1:
The patent changes the compositional parameters of the buffer layer by creating a gradient structure where the aluminum content increases from bottom to top. This gradual parameter change allows the lattice constant to transition smoothly, reducing dislocation density and improving epitaxial layer quality while maintaining compatibility with III-V semiconductor materials.
Solution Approach 2:
The patent applies different aluminum compositions at different positions within the buffer layer. The bottom portion has lower aluminum content for better lattice matching with the substrate, while the top portion has higher aluminum content for better lattice matching with the III-V semiconductor layer, creating optimal local conditions at each interface.
2Reliability
If existing substrates with multilayer structures are used, then the substrate can provide adhesion and barrier functions, but the complicated formation process increases production cost and causes defects
Solution Approach 1:
The patent merges multiple functions (adhesion, barrier, and lattice matching) into a single gradient buffer layer structure. This eliminates the need for separate adhesion layers and barrier layers, simplifying the formation process while maintaining all necessary functions through the compositional gradient alone.
Solution Approach 2:
The gradient buffer layer serves multiple purposes simultaneously: it provides adhesion between substrate and epitaxial layer, acts as a diffusion barrier, and gradually transitions the lattice constant to reduce dislocations. This multi-functionality reduces the number of required layers and process steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces production costs, improves yield, and enhances substrate reliability by minimizing material diffusion and defects, while allowing for the formation of a III-V semiconductor epitaxial layer and conductive layers suitable for semiconductor processing.
Implementation Method 1
formed using a chemical vapor deposition process to adjust the flow rate ratio of oxygen to nitrogen sources
Data Source
AI summary
A substrate includes a ceramic core, a first adhesion layer, a barrier layer, and a second adhesion layer. The first adhesion layer encapsulates the ceramic core and includes silicon oxynitride, wherein the atomic number ratio of oxygen to nitrogen in silicon oxynitride of the first adhesion layer has a first ratio. The barrier layer encapsulates the first adhesion layer and includes silicon oxynitride, wherein the atomic number ratio of oxygen to nitrogen in silicon oxynitride of the barrier layer has a second ratio that is different from the first ratio. The second adhesion layer encapsulates the barrier layer and includes silicon oxynitride, wherein the atomic number ratio of oxygen to nitrogen in silicon oxynitride of the second adhesion layer has a third ratio that is different from the second ratio.