Silicon Oxynitride Underlayer for Semiconductor Hydrogen Ion Trapping
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Solution Overview
Problem
The miniaturization of semiconductor devices using High Density Plasma (HDP) CVD leads to hydrogen ions penetrating into the underlayer, causing degradation due to RF bias, which degrades device reliability and hot-carrier resistance.
Innovation Solution
A silicon oxynitride film is formed as an underlayer using plasma CVD with source gases like SiH4, N2O, or O2, and subjected to heat treatment, to trap hydrogen ions and prevent their penetration into the underlayer, thereby enhancing hydrogen ion trapping functionality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If HDP CVD is used for miniaturization of semiconductor devices, then manufacturing precision and productivity are improved, but hydrogen ions penetrate into the underlayer causing degradation of reliability and hot-carrier resistance
Solution Approach 1:
A silicon oxynitride film is introduced as an intermediary layer between the HDP-CVD interlayer insulating film and the underlayer. This intermediary film traps hydrogen ions generated during HDP-CVD processing, preventing them from penetrating into the underlayer and causing degradation, thus resolving the contradiction between manufacturing precision and device reliability.
Solution Approach 2:
The harmful hydrogen ions generated during HDP-CVD miniaturization processing are converted into a beneficial effect by using the silicon oxynitride film to trap them. The hydrogen ions that would otherwise cause degradation are captured by the silicon oxynitride film, transforming a harmful byproduct into a controlled element that does not compromise device reliability.
2Productivity
If HDP CVD is used for fine-pitch interconnections, then productivity is improved, but RF bias causes hydrogen ion penetration and hot-carrier resistance degradation
Solution Approach 1:
The silicon oxynitride film serves as a protective intermediary that intercepts hydrogen ions generated during HDP-CVD processing of fine-pitch interconnections. By placing this film in the underlayer, it mediates between the high-productivity HDP-CVD process and the underlying structures, preventing hot-carrier degradation while maintaining fabrication efficiency.
3Ease of manufacture
If silicon oxide film is formed by CVD or SOG for planarization, then ease of manufacture is improved, but water content degrades hot-carrier resistance
Solution Approach 1:
The water content in CVD or SOG-formed silicon oxide films, which would normally degrade hot-carrier resistance, is converted into a beneficial effect. The water molecules are trapped by dangling bonds in the silicon oxynitride film, preventing them from reaching and degrading the MOSFET hot-carrier resistance, thus maintaining both ease of manufacture and device reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The silicon oxynitride film effectively suppresses hot-carrier degradation, Negative Bias Temperature Instability, and tunnel insulating film degradation, improving the reliability of semiconductor devices, especially in fine-pitch interconnections and low-temperature processes.
Implementation Method 1
A silicon oxynitride film is formed as an underlayer using plasma CVD with source gases like SiH4, N2O, or O2, and subjected to heat treatment, to trap hydrogen ions and prevent their penetration into the underlayer
Implementation Method 2
A silicon oxynitride film is formed as an underlayer using plasma CVD with source gases like SiH4, N2O, or O2
Data Source
AI summary
In order to block hydrogen ions produced when forming an interlayer insulating film by HDP-CVD or the like to thereby suppress an adverse effect of the hydrogen ions on a device, in a semiconductor device including a contact layer, a metal interconnection and an interlayer insulating film on a semiconductor substrate having a gate electrode formed thereon, the interlayer insulating film is formed on the metal interconnection by bias-applied plasma CVD using source gas containing hydrogen atoms, and a silicon oxynitride film is provided in the underlayer of the metal interconnection and the interlayer insulating film.