Silicon Composite Particle Infiltration for Uniform Anode Production

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing processes for producing silicon-containing composite particles for lithium-ion battery anodes suffer from inefficiencies in scale-up, throughput, and product homogeneity due to batch operation and high reaction temperatures, leading to uncontrolled silicon deposition and poor cycling behavior.

Innovation Solution

A continuous process using a plug-flow tubular reactor with controlled silicon precursor gas infiltration into porous particles at reduced temperatures and pressures, ensuring uniform deposition of nanoscale silicon domains within the pore network, maintaining product quality and scalability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If batch mode chemical vapour infiltration is used with high reaction temperatures to achieve homogeneous silicon deposition, then manufacturing precision is improved, but productivity deteriorates due to long reaction times and inability to scale-up

Engineering Contradiction:
Improvehomogeneity of silicon depositionVSAvoidthroughput and production rate
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent transitions from batch mode to continuous mode chemical vapour infiltration, where porous particles continuously flow through a tubular reactor and are exposed to silicon precursor gas along the length of the reactor. This continuous operation eliminates idle time between batches and enables steady-state production, thereby improving throughput and productivity while maintaining homogeneous silicon deposition through controlled residence time and uniform temperature distribution along the reactor length.

Inventive Principle:
Principle #20Continuity of useful action

Solution Approach 2:

The patent introduces a spatial dimension to the deposition process by using a tubular reactor where particles move through a extended reaction zone. Instead of all particles being exposed to the precursor gas simultaneously in a batch reactor, particles are distributed along the length of the tubular reactor, creating a gradient of deposition conditions that enables continuous production while maintaining uniformity through optimized residence time and temperature profile along the reactor axis.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Productivity

If high concentration of silicon precursor gas is used to increase deposition rate, then productivity is improved, but manufacturing precision deteriorates due to uncontrolled rapid deposition and blocking of pore access

Engineering Contradiction:
Improvedeposition rateVSAvoidcontrol of silicon deposition uniformity
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies different conditions at different locations along the tubular reactor. The silicon precursor gas concentration, temperature, and residence time are optimized at each position along the reactor length to control the deposition rate locally. This gradient approach allows higher overall productivity while preventing uncontrolled rapid deposition at any single location, thereby maintaining uniform silicon infiltration throughout the porous particle pore network.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes the deposition parameters along the length of the tubular reactor, including temperature gradient, gas flow rate, and residence time. By progressively adjusting these parameters from the reactor inlet to outlet, the system achieves controlled silicon deposition at each stage, preventing pore blocking while maintaining high overall deposition rates. The parameters are optimized to ensure uniform silicon distribution without rapid uncontrolled deposition.

Inventive Principle:
Principle #35Parameter changes

3Manufacturing precision

If low concentration of silicon precursor gas is used to control deposition rate, then manufacturing precision is improved, but productivity deteriorates due to extended reaction times

Engineering Contradiction:
Improvecontrol of silicon depositionVSAvoidreaction time and throughput
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The continuous flow regime allows low concentration silicon precursor gas to be efficiently utilized over an extended period. Particles continuously pass through the reaction zone, ensuring that each particle receives adequate exposure time to the precursor gas at low concentration. This eliminates the batch-wise idle time and enables steady-state production with controlled deposition rates, achieving both precision and acceptable throughput.

Inventive Principle:
Principle #20Continuity of useful action

4Productivity

If scale-up of batch production is attempted, then productivity is improved, but manufacturing precision deteriorates due to compositional inhomogeneities in product batch

Engineering Contradiction:
Improveproduction scaleVSAvoidcompositional uniformity
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The continuous mode operation enables scale-up by increasing the throughput of particles through the reactor rather than increasing batch size. Multiple particles are processed simultaneously in a steady flow, each experiencing identical controlled conditions. This eliminates the compositional inhomogeneities that arise in large batch operations where mixing and gas distribution become non-uniform, thereby maintaining high manufacturing precision at scaled-up production levels.

Inventive Principle:
Principle #20Continuity of useful action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The process achieves high-throughput production of homogeneous silicon-containing composite particles with improved cycling stability, suitable for large-scale manufacturing of lithium-ion battery anodes.

Implementation Method 1

A continuous process using a plug-flow tubular reactor with controlled silicon precursor gas infiltration into porous particles at reduced temperatures and pressures, ensuring uniform deposition of nanoscale silicon domains within the pore network

Methodology Applied
Scientific EffectChemical vapour infiltration: Chemical Vapour Deposition

Implementation Method 2

A continuous process using a plug-flow tubular reactor with controlled silicon precursor gas infiltration into porous particles

Methodology Applied
Scientific EffectPlug-flow: Laminar Flow

Data Source

PatentUS20250250668A1Continuous process for the preparation of silicon-containing composite particles
Publication Date: 2025.08.07 NEXEON LTD
  • US20250250668A1 patent drawing
  • US20250250668A1 patent drawing

AI summary

This invention relates to continuous process for preparing composite particles by continuous introduction of a porous particle feedstock and a silicon precursor gas into a first reaction zone and continuous withdrawal of a composite particles and an effluent gas from the first reaction zone, the composite particles comprising a porous particle framework and elemental silicon within the pores of the porous particle framework.