Silicon Photonics Integration Circuit for High-Speed Data

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Solution Overview

Problem

Current data communication systems face challenges in achieving high bandwidth and low cost, particularly in optical transceivers, as they struggle to keep pace with increasing demands for data transfer due to the limitations of CMOS technology scaling and the need for higher data rates in smaller form factors.

Innovation Solution

A silicon photonics integration circuit (SPIC) is developed on a single silicon-based wafer, incorporating novel mode size converters, high-performance silicon optical modulators, and Germanium-based high-speed photo diodes, along with low-loss passive waveguide devices, to enhance optical-electrical conversion efficiency and reduce power consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If standard CMOS silicon transistors continue to scale, then data communication bandwidth increases following Moore's Law, but scaling stops around 3 nm and bandwidth increase plateaus

Engineering Contradiction:
Improvedata communication bandwidthVSAvoidtechnology scalability
Core Design Contradiction:
ProductivityVSAdaptability or versatility

Solution Approach 1:

The patent replaces traditional electrical signal transmission through CMOS transistors with optical signal transmission through silicon photonics circuits. This substitution enables bandwidth continuation beyond the 3 nm scaling limit by using light instead of electrical signals, thereby resolving the contradiction between maintaining productivity growth and overcoming technology scalability limitations.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent employs composite material structures including silicon-on-insulator (SOI) waveguides, germanium-silicon (GeSi) photodetectors, and silicon nitride layers integrated on silicon substrates. These composite materials enable simultaneous achievement of low optical loss, high-speed detection, and CMOS compatibility, allowing the system to maintain productivity growth while adapting to post-Moore scaling requirements.

Inventive Principle:
Principle #40Composite materials

2Productivity

If optical transceivers use higher data rates in smaller form factors, then bandwidth capacity increases, but manufacturing complexity and cost increase

Engineering Contradiction:
Improvedata transfer rateVSAvoidfabrication complexity
Core Design Contradiction:
ProductivityVSEase of manufacture

Solution Approach 1:

The patent merges multiple optical functions (waveguiding, modulation, detection, and signal routing) into a single integrated silicon photonics chip. By combining these previously separate components into one monolithic structure fabricated using CMOS-compatible processes, the system achieves high data rates in small form factors while reducing manufacturing complexity and cost through standardization.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The silicon photonics chip is designed with universal interfaces and standardized component structures that can be configured for different data rates (100G, 400G) and applications. The modular design with reusable waveguide structures, couplers, and photodetector arrays enables the same fabrication process to produce multiple product variants, thereby improving ease of manufacture while maintaining high productivity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Ease of manufacture

If silicon photonics circuits use conventional designs, then manufacturing is simpler, but optical-electrical conversion efficiency and speed are insufficient

Engineering Contradiction:
Improvefabrication simplicityVSAvoidoptical-electrical conversion efficiency
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent applies local quality optimization by using different material compositions and structural configurations in specific regions of the chip. For example, germanium-silicon layers are placed only in photodetector regions to enhance optical-electrical conversion, while pure silicon waveguides are used in routing regions for low loss. This localized optimization maintains overall fabrication simplicity while dramatically improving conversion efficiency and speed in critical areas.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent optimizes multiple parameters including waveguide dimensions (width, height, spacing), coupling distances, photodetector active areas, and material compositions to achieve peak performance. By systematically adjusting these parameters within the CMOS fabrication process, the design maintains ease of manufacture through standard process compatibility while achieving superior optical-electrical conversion efficiency and bandwidth compared to conventional designs.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The SPIC supports high-speed, low-power, and cost-effective data communication, enabling 100 Gbps and 400 Gbps data center interconnections with improved bandwidth and reduced power consumption, addressing the limitations of existing technologies.

Implementation Method 1

a mode size converter configured to receive an incoming light signal into one of multiple waveguides

Methodology Applied
Scientific EffectMode coupling:

Implementation Method 2

multiple RX photo detectors coupled respectively to the multiple waveguides

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Implementation Method 3

Each modulator is configured to modulate one input light signal to generate one output light signal

Methodology Applied
Scientific EffectOptical modulation:

Data Source

PatentUS11409034B2Silicon photonics integration circuit
Publication Date: 2022.08.09 MARVELL ASIA PTE LTD
  • US11409034B2 patent drawing
  • US11409034B2 patent drawing
  • US11409034B2 patent drawing

AI summary

A silicon photonics integration circuit includes a silicon substrate member; a RX sub-circuit formed in the silicon substrate member including multiple RX-input ports each having a mode size converter configured to receive an incoming light signal into one of multiple waveguides and multiple RX photo detectors coupled respectively to the multiple waveguides; and a TX sub-circuit formed in the silicon substrate member including one or more TX-input ports each having a mode size converter coupled to a first TX photo detector into one input waveguide, one or more 1×2 directional couplers each coupled between the input waveguide and two mod-input waveguides, multiple modulators coupled between respective multiple mod-input waveguides and multiple mod-output waveguides each being coupled to a second TX photo detector into one of multiple output waveguides, and multiple TX-output ports each having a mode size converter coupled to respective one of the multiple output waveguides.