Silicon Photonics Modulator TM Mode Rib Geometry

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Solution Overview

Problem

Existing silicon photonics modulators face challenges in achieving low Vπ, high bandwidth, and low optical losses simultaneously, as most solutions improve one figure-of-merit at the expense of others, failing to meet the requirements for next-generation devices like High-Bandwidth Coherent Optical Subassembly (HB-COSA).

Innovation Solution

A silicon photonics modulator utilizing the Transverse Magnetic (TM) mode with a modified rib geometry, featuring a thicker waveguide and a rib structure that supports orthogonal mode propagation, reducing access resistance and optical losses while maintaining high bandwidth, achieved by varying dopant levels and incorporating a gap in the slab to shift the optical mode away from the slab.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If conventional rib waveguide structures are used, then manufacturing is simpler, but optical losses are high and bandwidth is limited

Engineering Contradiction:
Improveoptical lossesVSAvoidwaveguide structure complexity
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The waveguide structure is segmented into distinct regions: a core region with higher refractive index and a cladding region with lower refractive index. This segmentation allows optimal confinement of the optical mode in the core while reducing optical losses in the cladding, resolving the contradiction between simplicity and performance.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the waveguide are assigned different local properties: the core region has higher refractive index for mode confinement, while the cladding region has lower refractive index for loss reduction. This local differentiation enables simultaneous achievement of low optical losses and controlled complexity.

Inventive Principle:
Principle #3Local quality

2Power

If PN junction doping is increased to reduce Vπ, then modulation efficiency improves, but access resistance increases and bandwidth decreases

Engineering Contradiction:
Improvemodulation efficiency (Vπ)VSAvoidbandwidth
Core Design Contradiction:
PowerVSSpeed

Solution Approach 1:

The doping concentration is optimized locally: higher doping in regions where electric field control is needed for modulation efficiency, and lower doping in access regions where high resistance would limit bandwidth. This local optimization resolves the contradiction between Vπ and bandwidth.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The electrical characteristics of the PN junction are dynamically optimized through selective doping profiles that allow the structure to achieve both low Vπ for efficient modulation and low access resistance for high bandwidth operation.

Inventive Principle:
Principle #15Dynamics

3Power

If waveguide thickness is increased to improve mode confinement, then modulation efficiency improves, but optical losses increase

Engineering Contradiction:
Improvemodulation efficiencyVSAvoidoptical losses
Core Design Contradiction:
PowerVSLoss of energy

Solution Approach 1:

The waveguide thickness is optimized locally: sufficient thickness in the core region to confine the mode and enable efficient modulation, while the cladding region is designed with appropriate thickness and refractive index to minimize optical losses. This local optimization resolves the contradiction between modulation efficiency and optical losses.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The modulator achieves a Vπ of 2 V, optical losses of 4 dB, and a bandwidth of 26 GHz, effectively meeting the specifications for HB-COSA applications with improved mode confinement and reduced access resistance without increasing optical losses.

Implementation Method 1

The operation is at wavelengths in the infrared range, usually around 1550 nm which is used by most optical communication systems. Silicon-based modulators are widely used in optical communication systems.

Methodology Applied
Scientific EffectElectro-optic effect: Electro-Optic Effects

Implementation Method 2

Rib waveguides also provide confinement of the wave in two dimensions.

Methodology Applied
Scientific EffectTotal internal reflection: Total Internal Reflection

Implementation Method 3

The PN junction is typically formed laterally by doping one side of the waveguide with an N-type dopant, and the other side with a P-type dopant.

Methodology Applied
Scientific EffectDoping: Dopants

Data Source

PatentUS11586059B2Silicon photonics modulator using TM mode and with a modified rib geometry
Publication Date: 2023.02.21 CIENA CORP
  • US11586059B2 patent drawing
  • US11586059B2 patent drawing
  • US11586059B2 patent drawing

AI summary

An optical modulator includes a rib; and a slab interconnected to both sides of the rib; wherein the rib is dimensioned relative to the slab to support guiding of a Transverse Magnetic (TM) mode with a main lobe that propagates orthogonal to the slab and with the main lobe substantially excluded from the slab. The rib guides wavelengths in an infrared range in the TM mode. A height of the rib, relative to the slab, is about half of a width of the rib, between the slab.