Silicon Photoresist Composition for Fine-Pattern Etching Resistance
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing resist materials struggle to achieve both etching resistance and lithography properties, particularly in forming patterns with very small dimensions required by advanced lithography technologies such as EUV, making it difficult to produce high-quality semiconductor devices and liquid crystal display devices.
Innovation Solution
A photosensitive composition containing a silicon-containing polymer with phenolic hydroxy groups protected by an acid-dissociable group and a photoacid generating agent, specifically a sulfonium cation with an iodine atom, is used to form a patterned cured film through selective exposure and development.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional chemically amplified resist composition is used, then lithography properties are improved, but etching resistance deteriorates
Solution Approach 1:
The resist composition is divided into distinct functional components: a base material providing etching resistance (silicon-containing compound, aromatic hydrocarbon compound) and a photoacid generating agent providing lithography properties. This segmentation allows each component to optimize its specific function without compromising the other.
Solution Approach 2:
The invention uses composite material composition combining silicon-containing compounds and aromatic hydrocarbon compounds as base materials with photoacid generating agents. This composite approach enables simultaneous achievement of etching resistance (from silicon-containing compound) and lithography properties (from photoacid generating agent), resolving the contradiction between these two properties.
2Length of moving object
If the pattern dimension is reduced for miniaturization, then lithography advancement is achieved, but achieving both etching resistance and lithography properties becomes more difficult
Solution Approach 1:
The invention changes the chemical parameters of the resist composition by incorporating specific silicon-containing compounds and photoacid generating agents with optimized molecular structures and reactivity. This allows the formation of high-quality fine patterns (small dimensions) while maintaining etching resistance, as the photoacid generation and diffusion parameters are precisely controlled.
Data Source
AI summary
A photosensitive composition having both etching resistance and good lithography properties, and capable of forming patterns with very small dimensions, and a method for producing a patterned cured film. The photosensitive composition includes a silicon-containing polymer including a phenolic hydroxy group, and an alkali-soluble group protected by an acid-dissociable group, and a photoacid generating agent, the photoacid generating agent including a photoacid generating agent having a sulfonium cation including an iodine atom.