Silicon Precursor Composition for Low-Leakage ALD Dielectric Layers
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Solution Overview
Problem
As semiconductor devices become highly integrated, minimizing leakage current and achieving excellent step coverage in gate insulating layers and dielectric layers is required to meet industry demands, while maintaining high quality and reducing cell distribution.
Innovation Solution
A method of depositing a silicon-containing layer using a silicon precursor represented by Formula 1, which includes a heterocyclic group with nitrogen and alkyl groups, is used in an atomic layer deposition process to form a dense silicon-containing layer without halogen atoms, thereby preventing leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional deposition methods are used to form gate insulating layers and dielectric layers, then the layers can be formed with basic coverage, but leakage current increases and step coverage properties deteriorate
Solution Approach 1:
The patent changes the chemical parameters of the deposition process by using a specific silicon precursor compound (Formula 1) with heterocyclic groups containing nitrogen atoms. This chemical parameter change enables simultaneous achievement of low leakage current and excellent step coverage that cannot be obtained by conventional deposition methods
Solution Approach 2:
The patent employs a composite molecular structure in the silicon precursor that combines heterocyclic groups with nitrogen atoms and specific alkyl groups (R1, R2, R3). This composite material structure at the molecular level enables the deposited layer to exhibit both low leakage current and excellent step coverage properties
2Productivity
If the thickness of gate insulating layers and dielectric layers is reduced to match miniaturized circuits, then device integration is improved, but leakage current effects become more significant
Solution Approach 1:
By changing the chemical composition parameters of the deposition precursor to Formula 1, the patent enables formation of ultra-thin layers with simultaneously reduced leakage current, allowing continued device miniaturization and integration without being limited by leakage current issues
3Productivity
If halogen-containing precursors are used for silicon layer deposition, then deposition can proceed efficiently, but leakage current increases due to halogen atoms in the layer
Solution Approach 1:
The patent extracts and eliminates halogen atoms from the deposition precursor structure by using a carbon-based heterocyclic precursor (Formula 1) instead of conventional halogen-containing precursors. This removal of harmful halogen elements prevents leakage current while maintaining deposition efficiency
Solution Approach 2:
The heterocyclic groups in the precursor serve as temporary, disposable structural elements that facilitate efficient deposition but do not remain in the final layer, thereby maintaining deposition efficiency without introducing harmful residual atoms that cause leakage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method forms a high-quality silicon-containing layer with reduced leakage current and excellent thermal stability, suitable for gate insulating layers and dielectric layers, enhancing the performance of semiconductor devices.
Implementation Method 1
feeding a silicon precursor into a process chamber in which a substrate is loaded such that the silicon precursor is adsorbed onto the substrate
Data Source
AI summary
Provided is a precursor for depositing a silicon-containing layer, the silicon precursor having a heterocyclic group, and a method of depositing a silicon-containing layer using the same. The silicon precursor is represented by Formula 1.In Formula 1, A1 is a heterocyclic group including one or more nitrogen, and R1 is hydrogen or an alkyl group of 1˜6 carbon atoms. R2 may be an alkyl group of 1˜6 carbon atoms. R3 may be an alkyl group of 1˜6 carbon atoms.