Silicon Precursor Compounds for Subnanometer ALD Thickness Control
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Solution Overview
Problem
Existing technologies struggle to precisely control the thickness and silicon content of silicon-containing films in semiconductor devices, particularly in dielectric films, limiting their performance and efficiency.
Innovation Solution
A novel silicon precursor compound and composition are developed, allowing for precise control of film thickness and silicon content through atomic layer deposition (ALD), enabling the formation of extremely thin and uniform silicon-containing films.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional silicon precursor compounds are used in ALD gas supply, then the silicon-containing film can be formed, but the growth per cycle is large (0.6 Å/cycle or more) which limits precise thickness control
Solution Approach 1:
The invention changes the chemical parameters of the silicon precursor compound by introducing specific molecular structures (Formula I with defined R1-R14 groups and n values) that control the decomposition and reaction behavior during ALD. This parameter change reduces the growth per cycle to a controllable range, enabling precise thickness control while maintaining reasonable deposition rates.
Solution Approach 2:
The invention uses composite molecular structures combining silicon centers with specific organic ligands (amido, amino, or alkyl groups) that modulate the reactivity and decomposition characteristics. This composite approach allows tuning of the growth per cycle to achieve both thin film formation and precise thickness control.
2Manufacturing precision
If the growth per cycle of ALD gas supply is reduced to form very thin films (0.1 to 0.2 nm), then thickness control is improved, but the process complexity increases
Solution Approach 1:
By changing the chemical composition parameters of the silicon precursor to specific Formula I structures, the invention achieves reduced growth per cycle without requiring complex process adjustments. The molecular design inherently provides the desired deposition characteristics, simplifying the overall process while achieving uniform thin films.
Solution Approach 2:
The specific silicon precursor compound acts as an intermediary that mediates between the ALD gas supply process and the final film formation. Its controlled decomposition and reaction properties enable precise thickness control and uniform film formation without requiring additional process complexity.
3Manufacturing precision
If silicon content in dielectric film is increased to improve film quality, then film uniformity is improved, but the dielectric constant decreases
Solution Approach 1:
The invention changes the silicon content parameter in the dielectric film to a low level (1 to 4% by atom) while using specific Formula I silicon precursor compounds that enable uniform distribution of silicon atoms. This parameter optimization maintains film uniformity while preventing excessive dielectric constant reduction.
Solution Approach 2:
The invention achieves uniform local distribution of low levels of silicon (1 to 4% by atom) throughout the dielectric film using the controlled decomposition of Formula I precursors. This local quality control ensures uniform film properties without excessive silicon accumulation that would reduce dielectric constant.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the formation of silicon-containing films with controlled thickness and silicon content, enhancing the performance of dielectric films in semiconductor devices by improving uniformity and quality.
Implementation Method 1
a method for forming a silicon-containing film using the composition for forming a silicon-containing film
Implementation Method 2
an atomic layer deposition (ALD) cycle to form a zirconium oxide film (ZrO2) and an ALD cycle to form a silicon oxide film (SiO2) are combined
Data Source
AI summary
A silicon precursor compound, a preparation method therefor, a silicon-containing film formation composition containing the silicon precursor compound are disclosed. A method for forming a silicon-containing film by using the silicon-containing film formation composition is also disclosed. The silicon-containing film formation composition contains a silicon precursor compound having a specific structure so that the thickness of a silicon-containing film can be controlled to be very thin through atomic layer deposition (ALD), and, when a silicon-containing composite film is formed by combining an ALD cycle that forms a silicon-containing film and an ALD cycle that forms a film containing another metal, the silicon amount of the silicon-containing composite film can be finely controlled to be in a low range.