Silicon Precursor for Low-Temperature ALD Film Uniformity
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Solution Overview
Problem
Current methods for forming silicon-containing oxide and nitride thin films using atomic layer deposition face challenges in achieving uniform thickness and low process temperatures, particularly for high aspect ratio and three-dimensional structures, and there is a need for silicon precursors that are volatile and can be deposited at low temperatures.
Innovation Solution
A silicon precursor compound represented by specific chemical formulas, which can exist in a liquid state at room temperature and have high volatility, is synthesized through halide-amine and halide-hydrogen substitution reactions, allowing for deposition at low temperatures and improved film uniformity and step coverage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional silicon precursors are used for atomic layer deposition, then film formation is possible, but the process temperature must be high and thickness uniformity is poor
Solution Approach 1:
The patent changes the chemical parameters of the silicon precursor by introducing specific organic groups (alkyl, aryl, cycloalkyl) and functional groups (amino, alkoxy, halogen) to modify the precursor's reactivity and volatility. This allows the deposition process to occur at lower temperatures while maintaining or improving film uniformity. The precursor formulas (1) and (2) with specific R1-R6 substituents enable this parameter optimization.
Solution Approach 2:
The patent creates composite silicon precursor molecules that combine silicon center atoms with multiple organic ligands and functional groups. These composite structures (formulas 1 and 2) provide both the necessary reactivity for low-temperature deposition and the volatility for uniform film formation, resolving the contradiction between temperature requirements and film quality.
2Shape
If conventional silicon precursors are used, then deposition can proceed, but step coverage on high aspect ratio structures is insufficient
Solution Approach 1:
The patent modifies the physical parameters of the silicon precursor, particularly its volatility and molecular size, by selecting specific organic groups with appropriate steric bulk and volatility characteristics. This enables the precursor to penetrate and coat high aspect ratio structures uniformly, achieving both good step coverage and film uniformity that conventional precursors cannot provide.
3Temperature
If silicon precursors with high volatility are used, then low temperature deposition is possible, but film quality and etching characteristics may deteriorate
Solution Approach 1:
The patent designs composite silicon precursor molecules that balance volatility and reactivity. The organic ligands provide volatility for low-temperature deposition, while the silicon center with appropriate functional groups maintains high reactivity for forming quality films with good etching characteristics. This composite structure resolves the contradiction between temperature and film quality.
Solution Approach 2:
The patent applies local quality by having different parts of the precursor molecule serve different functions: the organic ligands (R1-R6 groups) provide volatility and steric control, while the silicon center and its immediate ligands (amino, alkoxy, halogen groups) provide reactivity and film quality. This functional differentiation allows simultaneous optimization of temperature and film properties.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The silicon precursor compound enables the formation of silicon-containing films with precise thickness control and excellent coverage on complex substrates, enhancing semiconductor device performance by allowing deposition in a wide temperature range from 100°C to 500°C, with improved etching characteristics and reduced carbon content.
Implementation Method 1
synthesized through halide-amine and halide-hydrogen substitution reactions
Implementation Method 2
synthesized through halide-amine and halide-hydrogen substitution reactions
Implementation Method 3
capable of depositing a silicon-containing oxide film or thin film or nitride film or thin film by atomic layer deposition
Data Source
AI summary
The present application relates to a silicon precursor compound, a method for preparing the silicon precursor compound, a precursor composition for depositing a silicon-containing oxide thin film or nitride thin film, the precursor composition comprising the silicon precursor compound, and a method for depositing a silicon-containing oxide thin film or nitride thin film using the precursor composition.