Silicon Precursor Compound for Fast ALD Film Growth
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Solution Overview
Problem
Current silicon precursor compounds used in atomic layer deposition (ALD) methods for forming silicon-containing films, such as silicon oxide and nitride, have limitations in film growth rate and process efficiency, particularly at low temperatures, which can lead to increased processing time and the need for multiple ALD devices.
Innovation Solution
A novel silicon precursor compound represented by the formula R1R2N—SiH2—N(SiR3R4R5)2 is developed, where R1, R2, R3, and R4 are specific alkyl or alkenyl groups, allowing for fast film growth per gas supply cycle through halide-amine substitution reactions, enabling faster deposition of silicon-containing films with improved uniformity and physical properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional silicon precursor compounds are used in ALD methods, then film formation is achieved, but film growth rate per gas supply cycle is slow
Solution Approach 1:
The patent modifies the molecular structure of silicon precursor compounds by introducing specific functional groups and adjusting chemical composition to enhance reactivity. The novel compound structure enables faster surface reactions during ALD cycles, achieving higher film growth rates per cycle while maintaining film quality and uniformity
Solution Approach 2:
The invention uses composite molecular structures combining silicon centers with specific organic ligands and functional groups. This composite approach creates precursors that exhibit both high reactivity for fast deposition and appropriate volatility for ALD process compatibility, resolving the contradiction between growth rate and processability
2Productivity
If conventional silicon precursor compounds are used, then film formation is achieved, but multiple ALD devices are required to meet production demands
Solution Approach 1:
By changing the chemical parameters of the precursor compound to achieve faster reaction kinetics and higher growth rates per cycle, a single ALD device can process more substrates in the same time period, effectively reducing the need for multiple devices and simplifying the overall production system
3Use of energy by moving object
If low temperature ALD is used, then energy consumption is reduced, but film growth rate decreases
Solution Approach 1:
The modified precursor compound structure enables effective ALD deposition at lower temperatures by reducing the activation energy required for surface reactions. The enhanced molecular reactivity compensates for the lower thermal energy available, maintaining acceptable growth rates while operating at reduced temperatures and lowering energy consumption
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The novel silicon precursor compound enhances film growth rate in ALD methods, allowing for more efficient processing of semiconductors and display substrates per unit time, reduces the number of required ALD devices, and enables precise control over film thickness and composition, even on complex substrates.
Implementation Method 1
allowing for fast film growth per gas supply cycle through halide-amine substitution reactions
Implementation Method 2
When a silicon-containing film is formed by an atomic layer deposition (ALD) method for sequentially supplying a silicon compound gas and a reaction gas necessary for film formation
Data Source
AI summary
The present disclosure relates to a silicon precursor compound, a method of preparing the silicon precursor compound, a silicon-containing film-forming precursor composition including the silicon precursor compound, and a method of forming a silicon-containing film using the precursor compound.