Silicon Precursor for High-Temperature ALD and CVD
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional silicon precursors fail to produce high-quality silicon-containing thin films at high process temperatures, particularly due to issues with step coverage, thickness control, and impurity contamination, limiting their application in advanced semiconductor devices.
Innovation Solution
A novel silicon precursor compound, represented by Formulas 1 and 2, is introduced, which is thermally stable at 600°C or more, allowing for precise thickness control and uniform deposition, and is suitable for both atomic layer deposition (ALD) and chemical vapor deposition (CVD), ensuring low impurity concentration and excellent interface characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional silicon precursors are used for deposition, then the deposition process can be performed, but the step coverage and thickness control are poor and impurities are contained in the thin film
Solution Approach 1:
The patent modifies the molecular structure of silicon precursor compounds by changing parameters such as the type of organic groups (alkyl, aryl), the number and position of substituents, and the presence of specific functional groups. These parameter changes in the precursor structure lead to improved deposition characteristics, better step coverage, and reduced impurity incorporation in the resulting thin films.
Solution Approach 2:
The patent employs composite precursor molecules that combine silicon centers with various organic ligands and functional groups. These composite structures allow for tailored reactivity and deposition behavior, enabling simultaneous achievement of good step coverage, thickness control, and low impurity content by optimizing the combination of different molecular components.
2Reliability
If conventional silicon precursors are used, then deposition can occur, but excellent step coverage and thickness control cannot be achieved in highly-integrated semiconductor devices
Solution Approach 1:
The patent systematically varies structural parameters of the silicon precursor including the size and branching of alkyl groups, the nature of aromatic substituents, and the configuration of amino groups. These parameter modifications optimize the precursor's reactivity and film-forming characteristics to achieve both excellent step coverage and precise thickness control simultaneously.
3Manufacturing precision
If high process temperature (600°C or more) is used for deposition, then the thin film quality can be improved, but conventional precursors cannot maintain thermal stability and produce desired film quality
Solution Approach 1:
The patent designs precursors with specific thermal stability parameters by selecting organic groups with appropriate bond strengths and steric properties. The molecular structure parameters are optimized so that the precursors remain stable at high temperatures (600°C or more) during deposition, preventing premature decomposition while still enabling high-quality film formation.
4Adaptability or versatility
If aminosilane precursors are used, then various thin films can be deposited, but low impurity concentration and excellent interface characteristics cannot be ensured
Solution Approach 1:
The patent creates composite aminosilane precursors with carefully selected organic substituents that combine the versatility needed for various deposition applications with the specific properties required for low impurity incorporation and excellent interface characteristics. The composite structure allows simultaneous optimization of multiple performance parameters.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The novel silicon precursor enables the production of high-quality silicon-containing thin films with improved step coverage, surface roughness, and density, suitable for applications in 3D-NAND memory devices, semiconductors, displays, and solar cells, with expected applications in nano devices and as insulating films.
Implementation Method 1
a vapor deposition precursor comprising any one or more compounds selected from the group consisting of a compound represented by Formula 1 and a compound represented by Formula 2
Implementation Method 2
the silicon compound can be applied to a high process temperature of 600° C. or more
Data Source
AI summary
The present invention relates to a vapor deposition compound capable of thin film deposition through vapor deposition, and particularly to a silicon precursor capable of being applied to ALD or CVD, and specifically, enabling high temperature deposition, and a method of manufacturing a silicon-containing thin film.