Silicon Precursor Composition for Low-Temperature IC Film Deposition
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Solution Overview
Problem
The development of electronics has led to the downscaling of semiconductor devices, requiring techniques for forming silicon-containing films with uniform thickness, excellent electrical properties, and stable deposition processes at low temperatures, while also ensuring good gap-fill, step coverage, and etching characteristics.
Innovation Solution
The use of silicon compounds represented by General formula (1), which can form a thin film at a uniform thickness under low process temperatures, providing excellent gap-fill, step coverage, and etching characteristics, and improving process stability and mass productivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional silicon compounds are used for forming silicon-containing films, then deposition can be performed, but the process requires high temperature and results in poor gap-fill and step coverage characteristics
Solution Approach 1:
The patent changes the chemical parameters of the silicon compound by introducing specific organic groups (alkyl, alkoxy, amino) and halogen atoms at defined positions in the molecular structure. This molecular design enables the compound to decompose and deposit silicon at lower temperatures while maintaining film quality and improving gap-fill characteristics.
Solution Approach 2:
The patent uses composite silicon compounds that combine silicon with organic ligands and halogen atoms in a specific molecular architecture. This composite structure allows the compound to provide both low-temperature deposition capability and excellent film formation characteristics including gap-fill and step coverage.
2Productivity
If conventional deposition processes are used, then silicon-containing films can be formed, but the process stability and mass productivity are insufficient
Solution Approach 1:
The patent performs preliminary molecular design and synthesis of silicon compounds with specific structures before the deposition process. The pre-designed molecular structure ensures stable decomposition behavior and consistent film formation, thereby improving process stability and mass productivity without requiring additional process steps.
3Manufacturing precision
If high temperature processing is used, then deposition can proceed, but the electrical properties and purity of the silicon-containing film deteriorate
Solution Approach 1:
The patent changes the chemical composition parameters of the silicon compound by incorporating specific organic groups and halogen atoms that facilitate low-temperature decomposition. This allows film deposition at temperatures that preserve electrical properties and minimize impurity formation, achieving both low temperature processing and high film quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
These silicon compounds enable the formation of high-quality silicon-containing films with improved electrical properties and productivity, while maintaining process stability and reducing impurities in the film.
Implementation Method 1
a chemisorbed layer of the silicon compound may be formed on a surface of each of the plurality of memory cells
Data Source
AI summary
Silicon compounds may be represented by the following formula:Each of Ra, Rb, and Rc may be a hydrogen atom, a halogen atom, a C1-C7 alkyl group, an amino group, a C1-C7 alkyl amino group, or a C1-C7 alkoxy group, Rd may be a C1-C7 alkyl group, a C1-C7 alkyl amino group, or a silyl group represented by a formula of *—Si(X1)(X2)(X3). Each of X1, X2, and X3 may be a hydrogen atom, a halogen atom, a C1-C7 alkyl group, an amino group, a C1-C7 alkyl amino group, or a C1-C7 alkoxy group, and * is a bonding site. In some embodiments, when Rb is the C1-C7 alkyl amino group and Rd is the C1-C7 alkyl group, Rb may be connected to Rd to form a ring. To manufacture an integrated circuit (IC) device, a silicon-containing film may be formed on a substrate using the silicon compound of the formula provided above.