Silicon Precursor for Uniform Poly-Silicon Seed Layers
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Solution Overview
Problem
The challenge in semiconductor manufacturing is forming uniform and conformal layers in high-aspect-ratio recessed regions of 3D semiconductor devices, where existing silicon precursors fail to provide adequate seed properties and step coverage, leading to poor layer formation and reliability issues.
Innovation Solution
A silicon precursor with the chemical formula R1—SixHy, where 'x' is 2 or greater, 'y' satisfies y=2x+1, and 'R1' includes an amino group, alkyl group, cyclopentadienyl group, or halogen, is used to form a single-layered silicon atomic layer, which serves as a seed for poly-silicon layer formation, enhancing adsorption and step coverage properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional silicon precursors are used to form layers in high-aspect-ratio recessed regions, then the manufacturing process is simple, but the layer uniformity and step coverage are poor
Solution Approach 1:
The patent changes the chemical parameters of the silicon precursor by using silane compounds with specific molecular structures (SiH4, Si2H6, SinH2n+2 where n≥3) and controlling the hydrogen to silicon ratio (y=2x+1), which improves layer uniformity and step coverage in high-aspect-ratio regions without significantly complicating the manufacturing process
Solution Approach 2:
The patent employs composite chemical structures in the silicon precursor by combining silicon atoms with specific hydrogen ratios and using substituted silanes with organic groups (R1, R2, R3), creating a material that provides both the necessary reactivity for good seed properties and the structural characteristics for improved step coverage in complex 3D semiconductor structures
2Reliability
If conventional silicon precursors are used, then the process is straightforward, but the seed property and step coverage are inadequate
Solution Approach 1:
The patent optimizes the chemical composition parameters of the silicon precursor by specifying exact molecular formulas (SiH4, Si2H6, SinH2n+2) and hydrogen-to-silicon ratios (y=2x+1), which enhances the seed property for reliable poly-silicon layer formation while maintaining a manageable precursor structure
Solution Approach 2:
The patent introduces local quality variations by using substituted silanes with different organic groups (amino, alkyl, cyclopentadienyl, halogen) at specific positions, which provides tailored reactivity and adsorption properties for improved seed formation in critical regions without overly complicating the overall precursor structure
3Manufacturing precision
If existing precursors are used for 3D semiconductor devices, then the manufacturing process is simple, but the conformal layer formation in high-aspect-ratio regions is difficult
Solution Approach 1:
The patent achieves conformal coverage in high-aspect-ratio regions by precisely controlling the precursor molecular structure with specific silicon-to-hydrogen ratios (y=2x+1) and using substituted silanes, which improves adsorption uniformity and step coverage while keeping the molecular structure variations within manageable limits
Solution Approach 2:
The patent applies preliminary action by forming a uniform silicon atomic layer first using the optimized silicon precursor before depositing subsequent layers, which ensures conformal coverage in high-aspect-ratio regions and provides a reliable seed layer for subsequent poly-silicon formation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed silicon precursor improves the uniformity and morphology of poly-silicon layers, reduces surface roughness, and ensures excellent step coverage, thereby enhancing the reliability and integration of semiconductor devices, especially in high-aspect-ratio structures.
Implementation Method 1
providing the silicon precursor on a substrate to form a single-layered silicon atomic layer
Data Source
AI summary
The inventive concepts provide silicon precursors, methods of forming a layer using the same, and methods of fabricating a semiconductor device using the same. The silicon precursor includes a silane group including two or more silicon atoms. The silicon precursor has a high and uniform adsorption property on surfaces of layers (e.g., a silicon layer, an oxide layer, and a nitride layer) that are mainly used when semiconductor devices are fabricated.