Silicon Probe Guide Plate with SiO2 Edge Reinforcement
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Solution Overview
Problem
The miniaturization of semiconductor devices requires thinner probes and guide plates with smaller, tighter-pitched through-holes, which is difficult to achieve with conventional mechanical or laser processing, and silicon substrates are fragile and not electrically insulative, posing challenges for edge protection and electrical insulation.
Innovation Solution
A guide plate using a silicon substrate with photolithography and etching to form minute through-holes, where the edge parts are reinforced with a silicon dioxide film to enhance mechanical strength and provide electrical insulation, preventing probe damage and electrical connection issues.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional mechanical processing or laser processing is used to form through-holes, then the guide plate can be manufactured, but it is difficult to form minute through-holes at tight pitches required for miniaturized semiconductor devices
Solution Approach 1:
The patent replaces conventional mechanical processing or laser processing with photolithography and etching processes. This substitution enables the formation of minute through-holes at tight pitches (e.g., several tens of thousands of 90 μm×90 μm rectangular through-holes in a 50 mm×50 mm region) that cannot be achieved by traditional methods, directly resolving the contradiction between manufacturing precision and ease of manufacture.
2Ease of manufacture
If silicon substrates are used instead of ceramic plates, then the substrate is easier to process, but the substrate is fragile and edge parts of through-holes may be destroyed by probes contacting them
Solution Approach 1:
The patent creates a composite structure by forming a silicon dioxide film on the edge parts of the silicon substrate. This composite material approach combines the ease of processing silicon with the mechanical strength of silicon dioxide, protecting the fragile edge parts from probe contact damage while maintaining the processing advantages of silicon substrates.
3Ease of manufacture
If silicon substrates are used instead of ceramic plates, then the substrate is easier to process, but electrical connection between probes that come into contact with the inner walls of the through-holes occurs
Solution Approach 1:
The patent introduces silicon dioxide film as an intermediary layer on the inner walls of the through-holes. This intermediary provides electrical insulation between probes that contact the inner walls, preventing unwanted electrical connections while allowing the probes to be guided accurately. The silicon dioxide film acts as a mediator that maintains the ease of silicon processing while eliminating the electrical conductivity problem.
4Object-affected harmful factors
If a thin oxide film is used to protect the silicon layer, then chemical environment resistance is improved, but mechanical strength to resist destruction by probes is insufficient
Solution Approach 1:
The patent changes the thickness parameter of the oxide film from thin to thick (forming a thick silicon dioxide film on the edge parts). This parameter change transforms the film's primary function from chemical protection (adequate with thin films) to mechanical protection (requiring thick films), thereby resolving the contradiction between chemical environment resistance and mechanical strength.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the formation of guide plates with multiple small through-holes at tight pitches, enhancing mechanical strength and preventing probe damage, while ensuring electrical insulation, thus supporting the miniaturization of semiconductor devices.
Implementation Method 1
simply by thermally oxidizing the edge part and thereby increasing the volume of the edge part
Data Source
AI summary
The invention provides a guide plate for a probe card including a silicon substrate including a surface and a through-hole, an edge part of the through-hole, and a curved-face part. The through-hole is configured to guide a probe and includes an inner wall face. The edge part of the through-hole is constituted by the surface of the silicon substrate and the inner wall face of the through-hole. The curved-face part is formed on the edge part and formed of a silicon dioxide film.