Silicon Deposition Reactor Layout to Prevent Wafer Chuck Nodules

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Solution Overview

Problem

Silicon deposition in semiconductor processing systems often results in unwanted silicon films and nodules on internal reactor surfaces and structures, leading to reduced tool reliability and potential substrate damage during wafer unloading and processing.

Innovation Solution

A method involving a semiconductor processing system with a reactor divided into upper and lower chambers, where a silicon-containing gas is flowed through the upper chamber to deposit silicon on the substrate, and a halogen-containing gas is flowed through the lower chamber to etch deposited films on internal surfaces and control the silicon layer thickness, including the substrate's periphery.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If silicon deposition is performed in a reactor, then silicon layers are deposited onto substrates, but silicon films and nodules form on internal reactor surfaces and structures

Engineering Contradiction:

Improvesilicon layer deposition qualityVSAvoidcollateral silicon deposition on reactor surfaces

Core Design Contradiction:

Manufacturing precisionVSObject-generated harmful factors

Solution Approach 1:

The reactor is divided into an upper deposition chamber and a lower chamber separated by a divider. The substrate is positioned in the upper chamber where silicon deposition occurs, while the lower chamber is exposed to halogen-containing gas for etching silicon films from reactor surfaces. This spatial segmentation allows simultaneous deposition and cleaning operations in different zones.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

A halogen-containing gas (such as HCl or Cl2) is introduced as an intermediary substance to etch and remove silicon films from the reactor's internal surfaces. This gas acts as a mediator that selectively removes deposited silicon from reactor walls and structures without significantly affecting the silicon layer formation on the substrate in the upper chamber.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Reliability

If silicon nodules form between the wafer and chuck, then the wafer becomes fixed to the chuck, but substrate damage occurs during unloading and processing

Engineering Contradiction:

Improvewafer handling reliabilityVSAvoidsubstrate damage risk

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The lower chamber is exposed to halogen-containing gas before and during the deposition process to prevent silicon nodules from forming between the wafer backside and the chuck. This preliminary cleaning action removes silicon films that would otherwise nucleate and grow into damaging nodules, ensuring reliable wafer handling throughout the process.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The halogen-containing gas, which could potentially etch the silicon layer on the substrate, is instead used beneficially to prevent nodule formation. By controlling the gas flow and reactor geometry, the harmful etching effect is directed away from the substrate while the beneficial effect of preventing silicon film accumulation on the chuck is achieved.

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

3Temperature

If silicon films develop on reactor walls, then heat transmissivity is reduced, but tool reliability decreases

Engineering Contradiction:

Improveheat transmissivity of reactor wallsVSAvoidprocess tool reliability

Core Design Contradiction:

TemperatureVSReliability

Solution Approach 1:

The halogen-containing gas is flowed through the lower chamber continuously during the deposition process to maintain clean reactor surfaces. This continuous cleaning action prevents silicon film accumulation on reactor walls, ensuring sustained heat transmissivity and tool reliability throughout extended production runs without requiring shutdowns for maintenance.

Inventive Principle:

Principle #20Continuity of useful action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively limits silicon deposition on internal reactor surfaces, reduces the risk of substrate damage, and maintains process tool reliability by controlling silicon layer thickness and preventing silicon nodules from forming between the wafer and chuck.

Implementation Method 1

a silicon-containing gas is flowed through the upper chamber to deposit a layer of the upper surface of the substrate

Methodology Applied

Scientific EffectChemical Vapour Deposition: Chemical Vapour Deposition

Implementation Method 2

A halogen-containing gas is flowed through the lower chamber to etch a deposited film on at least one wall bounding the lower chamber of the reactor

Methodology Applied

Scientific EffectChemical Etching:

Data Source

PatentUS20240079231A1Method and device for depositing silicon onto substrates

Publication Date: 2024.03.07 ASM IP HLDG BV

AI summary

A method for forming a layer on a substrate includes providing a substrate in a reactor of a semiconductor processing system, the reactor having a divider separating an upper chamber from a lower chamber and a substrate holder therein, the substrate having upper and lower surfaces. The wafer is positioned within the reactor using the substrate holder such that the upper surface bounds the upper chamber, a silicon-containing gas is flowed through the upper chamber to deposit a layer of the upper surface, and a halogen-containing gas is flowed through the lower chamber to etch a deposited film on at least one wall bounding the lower chamber while flowing the silicon-containing gas through the upper chamber. Semiconductor processing systems are also described.