Silicon Reactor Hexagonal Rod Holders

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Solution Overview

Problem

Existing reactors for producing high-purity silicon by thermal decomposition of silicon-containing compounds face challenges in energy efficiency and temperature control, particularly due to large temperature gradients and the formation of undesirable silicon dust.

Innovation Solution

A reactor design featuring a hexagonal pattern of holders for silicon rods and a jacket-shaped dividing wall that allows for uniform distribution of silicon rods and improved flow control, reducing energy loss and enhancing temperature management.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If a heat shield is used to shield the outer walls of the reactor from the silicon rods, then the reactor walls are protected from excessive heat, but silicon deposits on the heat shield causing energy loss and requiring maintenance

Engineering Contradiction:
Improvereactor wall temperatureVSAvoidenergy loss due to silicon deposition
Core Design Contradiction:
TemperatureVSLoss of energy

Solution Approach 1:

The invention removes the heat shield component entirely from the reactor design. Instead of shielding the outer walls, the patent uses a different approach where the reactor walls themselves are directly exposed to the thermal field, and temperature management is achieved through other means such as optimized reactor geometry and material selection. This eliminates the problem of silicon deposition on shields while still maintaining acceptable wall temperatures.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The invention introduces a layer of refractory material or thermal barrier coating directly on the reactor walls that serves as an intrinsic thermal management layer rather than a separate heat shield. This intermediary layer is integrated into the wall structure itself, preventing silicon deposition issues while providing the necessary thermal protection.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Productivity

If the gas mixture temperature is allowed to rise above 400°C, then the decomposition process accelerates, but monosilane decomposes in the gas phase forming silicon dust that settles on rods and is excreted

Engineering Contradiction:
Improvedecomposition rateVSAvoidsilicon dust formation
Core Design Contradiction:
ProductivityVSObject-generated harmful factors

Solution Approach 1:

The invention creates different temperature zones within the reactor - a cooler zone for gas introduction and mixing, and a hotter zone for decomposition. By locally controlling the temperature distribution rather than uniformly heating the entire reactor, the patent prevents premature gas-phase decomposition that leads to dust formation, while still achieving high decomposition rates in the designated hot zone where silicon rods are present.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The invention pre-cools the gas mixture before it enters the decomposition zone and ensures that monosilane remains in the liquid or controlled vapor phase until it reaches the silicon rods. This preliminary temperature control prevents unwanted gas-phase decomposition and dust formation before the actual decomposition process begins.

Inventive Principle:
Principle #10Preliminary action

3Temperature

If active cooling is used to maintain lower temperatures in reactor parts, then temperature control is achieved, but large temperature gradients are created inside the reactor

Engineering Contradiction:
Improvereactor part temperature controlVSAvoidtemperature gradient stability
Core Design Contradiction:
TemperatureVSStability of the object's composition

Solution Approach 1:

The invention divides the reactor into distinct functional zones with different temperature requirements - a decomposition zone with high temperature where silicon rods are located, and a wall region that can be cooled. By segmenting the thermal management approach, the patent achieves effective temperature control without creating destabilizing gradients that would affect the overall process stability.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The invention applies cooling selectively to specific reactor components (such as the outer walls or specific regions) rather than uniformly cooling the entire reactor. This localized cooling approach maintains temperature control where needed while minimizing the creation of large temperature gradients in the decomposition zone, thereby preserving process stability.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The reactor operates more energy-efficiently, with reduced temperature gradients and minimized silicon dust formation, enabling better control over the decomposition process and improved silicon production.

Implementation Method 1

thermal decomposition of a silicon-containing compound on highly heated silicon rods

Methodology Applied
Scientific EffectThermal decomposition: Pyrolysis

Implementation Method 2

other reactor parts are kept at significantly lower temperatures through active cooling

Methodology Applied
Scientific EffectActive cooling: Cooling

Implementation Method 3

During thermal decomposition in the reactor, not inconsiderable amounts of silicon also deposit on the shield

Methodology Applied
Scientific EffectThermal decomposition deposition: Deposition (physical)

Data Source

PatentEP2794087B1Reactor and process for producing high-purity silicon
Publication Date: 2018.11.07 SCHMID SILICON TECH
  • EP2794087B1 patent drawingFigure 1~2
  • EP2794087B1 patent drawingFigure 3

AI summary

A reactor for producing silicon by means of thermal decomposition of a silicon-containing compound on silicon rods heated to a high temperature, which comprises a reactor bottom and an upper reactor part mounted thereon which together enclose an interior reactor space in which the thermal decomposition occurs, where the reactor bottom has holders in which the silicon rods are fixed, is described. The reactor is characterized in that the holders on the reactor bottom form a pattern made up of hexagons and/or in that the interior reactor space is divided by a cylindrical dividing wall into two subregions, a central, preferably cylindrical inner region in which the silicon rods are arranged and a preferably annular outer region radially enclosing the inner region, where the subregions are open at the top or connected to one another by openings in the dividing wall. Furthermore, a process for producing silicon which can be carried out in such a reactor is described.