Silicon Recess Deposition with Constant-Temperature Etch Cycling
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Solution Overview
Problem
The existing DED process for manufacturing semiconductor devices requires repeated temperature changes between film deposition and etching steps, leading to inefficiencies and increased process time due to the need to stabilize temperature fluctuations, especially when dealing with recesses of varying aspect ratios.
Innovation Solution
A method and apparatus that maintain a constant film deposition temperature throughout the DED process by using chlorine and hydrogen gases to etch the silicon film, reducing the etching rate and allowing for controlled etching at the same temperature as deposition, thereby eliminating the need for temperature fluctuations and improving productivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If temperature is changed between film deposition and etching steps in the DED process, then film deposition quality is maintained, but process time increases due to temperature stabilization requirements
Solution Approach 1:
The patent changes the chemical composition of the etching gas from conventional pure chlorine to a mixed gas containing chlorine and hydrogen. This parameter change in gas composition allows the etching reaction to proceed effectively at the film deposition temperature, eliminating the need for temperature changes while maintaining both deposition quality and etching performance.
2Productivity
If temperature is maintained constant during DED process, then process time is reduced, but etching rate becomes uncontrolled and too high
Solution Approach 1:
The patent introduces hydrogen into the etching gas mixture to fundamentally change the etching mechanism. The hydrogen-containing gas mixture creates a more controlled etching reaction that proceeds at a manageable rate even at elevated film deposition temperatures, unlike conventional chlorine gas which becomes uncontrollably reactive at these temperatures.
Solution Approach 2:
The patent uses a composite gas mixture of chlorine and hydrogen for etching. This composite approach combines the etching capability of chlorine with the temperature-modulating and rate-controlling effects of hydrogen, creating a synergistic effect that enables controlled etching at constant high temperature.
3Ease of manufacture
If conventional chlorine gas is used for etching at film deposition temperature, then etching can be performed, but etching rate is too high and uncontrollable
Solution Approach 1:
The patent modifies the etching gas parameters by adding hydrogen to the chlorine gas mixture. This compositional change fundamentally alters the reaction kinetics, reducing the etching rate to a controllable level while maintaining effective silicon film removal capability at film deposition temperatures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces process time and improves productivity by maintaining a constant temperature, ensuring high-quality deposition while allowing for controlled etching, even in recesses with different aspect ratios, thus enhancing the efficiency of semiconductor device manufacturing.
Implementation Method 1
a silicon-containing gas is supplied to a substrate having a recess in a surface thereof at a predetermined film deposition temperature, thereby depositing a first silicon film in the recess
Implementation Method 2
Chlorine and hydrogen are supplied to the substrate while maintaining the predetermined film deposition temperature, thereby etching the first silicon film deposited in the recess to expand an opening width of the first silicon film
Data Source
AI summary
A method for manufacturing a semiconductor device is provided. In the method, a silicon-containing gas is supplied to a substrate having a recess in a surface thereof at a predetermined film deposition temperature, thereby depositing a first silicon film in the recess. Chlorine and hydrogen are supplied to the substrate while maintaining the predetermined film deposition temperature, thereby etching the first silicon film deposited in the recess to expand an opening width of the first silicon film. The silicon-containing gas is supplied to the substrate while maintaining the predetermined film deposition temperature, thereby further depositing a second silicon film on the first silicon film in the recess.