Silicon-Containing Resin Composition for Semiconductor Pattern Formation
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Solution Overview
Problem
Current pattern forming methods for semiconductor production do not adequately achieve the required etching resistance and reduce residue defects during the development process.
Innovation Solution
A pattern forming method using an actinic ray-sensitive or radiation-sensitive resin composition with a specific range of Si atoms, specifically 1.0 to 30 mass %, and a silsesquioxane structure, combined with a compound capable of generating an acid upon irradiation, to enhance etching resistance and reduce residue defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional actinic ray-sensitive resin composition is used for pattern formation, then the development process can be completed, but the etching resistance of the formed pattern is insufficient
Solution Approach 1:
The patent modifies the chemical composition parameters of the resin by incorporating specific silicon-containing compounds (silsesquioxane structures) and adjusting the ratio of polar to non-polar groups. This changes the etching resistance parameter while maintaining pattern formation quality, directly resolving the contradiction between etching resistance and pattern quality
Solution Approach 2:
The patent creates a composite resin system combining multiple components: silsesquioxane-containing compounds, polar groups, non-polar groups, and acid generators. This composite material approach achieves both high etching resistance and good pattern quality by synergistic interaction of components, resolving the technical contradiction
2Manufacturing precision
If conventional resin composition is used, then pattern formation is achieved, but residue defects occur during development
Solution Approach 1:
The patent adjusts the chemical parameters of the resin composition, specifically incorporating silicon-containing compounds with silsesquioxane structures and optimizing the balance between polar and non-polar groups. These parameter changes reduce residue defects while maintaining pattern formation capability
Solution Approach 2:
The patent converts the potential harm of residue defects into a benefit by using acid-decomposable groups that selectively remove unwanted residues during development while preserving the desired pattern structure. The acid treatment that could cause damage instead eliminates harmful residues
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively forms patterns with improved etching resistance and reduced residue defects, meeting the demands for finer wiring and better performance in electronic devices.
Implementation Method 1
a compound capable of generating an acid upon irradiation with actinic rays or radiation
Data Source
AI summary
A method for producing an electronic device includes the pattern forming method, and an actinic ray-sensitive or radiation-sensitive resin composition for organic solvent development. Specifically, provided is a pattern forming method, including a film forming step of forming a film by an actinic ray-sensitive or radiation-sensitive resin composition, an exposure step of irradiating the film, and a development step of developing the film using a developer containing an organic solvent, in which the composition contains a resin containing a repeating unit having an Si atom and a repeating unit having an acid-decomposable group and a compound capable of generating an acid upon irradiation with actinic rays or radiation, the content of Si atoms in the resin is 1.0 to 30 mass %, and the content of the resin in the total solid content of the composition is 20 mass % or more.