Silicon-Containing Resist Underlayer Film for LWR and CDU Control
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Solution Overview
Problem
As semiconductor manufacturing advances towards higher integration and miniaturization, the miniaturization of resist patterns leads to degraded edge roughness (LWR) and critical dimension uniformity (CDU) due to acid diffusion and agglomeration in chemically amplified resist systems, which also causes pattern collapse and reduced lithography performance.
Innovation Solution
A silicon-containing resist underlayer film composition is developed, incorporating a betaine-type photo-acid generator and thermally crosslinkable polysiloxane, which forms a crosslinked film to restrict acid diffusion and improve dissolution contrast, thereby enhancing LWR and CDU.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If acid proliferation mechanism is utilized to enhance dissolution contrast, then sensitivity is improved, but LWR and CDU are degraded
Solution Approach 1:
A silane crosslinking catalyst is introduced as an intermediary substance in the resist underlayer film to control acid diffusion. The catalyst mediates between the acid generator and the polymer, enabling controlled crosslinking that restricts acid proliferation while maintaining dissolution contrast, thereby improving both LWR/CDU without sacrificing sensitivity
Solution Approach 2:
The invention changes the chemical parameters of the resist underlayer film by incorporating specific components: a silane crosslinking catalyst (0.01-10 wt%), acid generator, and polymer with specific functional groups. These parameter changes enable controlled acid diffusion and crosslinking density, simultaneously achieving high dissolution contrast and low LWR/CDU
2Reliability
If thin resist films are formed to prevent pattern collapse, then pattern stability is improved, but LWR and CDU are degraded
Solution Approach 1:
The resist underlayer film is prepared in advance with pre-configured crosslinking catalyst and acid generator components. This preliminary action creates a controlled chemical environment that restricts acid diffusion before patterning, enabling thin film formation while maintaining low LWR/CDU through the pre-established crosslinking network
Solution Approach 2:
The resist underlayer film uses a composite material system comprising polymer, acid generator, and silane crosslinking catalyst in specific ratios. This composite structure provides both the mechanical stability needed for thin films and the controlled chemical properties needed for low LWR/CDU through synergistic interaction of components
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively improves LWR and CDU of resist patterns, maintaining high dry etching selectivity and precision in transferring patterns to substrates, even during multiple exposure processes, thus enhancing semiconductor device performance.
Implementation Method 1
a betaine-type photo-acid generator
Implementation Method 2
thermally crosslinkable polysiloxane which forms a crosslinked film
Implementation Method 3
the diffusion of proliferated acids is not negligible
Data Source
AI summary
A composition for forming a silicon-containing resist underlayer film contains at least: one or more compounds shown by the following general formula (P-0); and a thermally crosslinkable polysiloxane (Sx),where R100 represents divalent organic group substituted with one or more fluorine atoms; R101 and R102 each independently represent a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by hetero-atom; R103 represents linear, branched, or cyclic divalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by hetero-atom; R101 and R102, or R101 and R103, are optionally bonded to each other to form a ring with sulfur atom in the formula; and L104 represents a single bond or linear, branched, or cyclic divalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by hetero-atom.