Silicon-Containing Resist Underlayer Coating Composition
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Solution Overview
Problem
Conventional underlayer coatings for semiconductor devices face issues with high temperature processing, leading to volatilization of low molecular weight components, contamination of apparatuses, and interference with photoresist formation due to reflection and scattering from semiconductor substrates, especially in high aspect ratio structures.
Innovation Solution
A silicon atom-containing underlayer coating forming composition that can be cured by light irradiation, comprising 5-45% silicon, which provides etching resistance and anti-reflective properties, preventing intermixing with photoresists and allowing for high dry etching rates, thus forming a stable and effective underlayer without the need for high-temperature processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If organic underlayer coating is formed by heating at high temperature (170-200°C), then the underlayer coating can be formed on semiconductor substrate, but low molecular weight components are volatilized or sublimated causing apparatus pollution and harmful influence on pattern formation
Solution Approach 1:
The patent changes the curing mechanism from thermal (heat-based) to photopolymerization (light-based). The composition uses photopolymerizable compounds that crosslink upon exposure to actinic radiation, eliminating the need for high-temperature heating and thereby preventing volatilization and sublimation of low molecular weight components that pollute apparatuses.
Solution Approach 2:
The patent replaces the thermal field (heat treatment) with an optical field (photopolymerization). Instead of using thermal energy to cure the underlayer coating, the invention uses light energy (actinic radiation) to initiate photopolymerization of the photopolymerizable compound, thus substituting a mechanical/thermal process with an optical one.
2Reliability
If conventional organic underlayer coating is used, then the coating can be formed between photoresist and substrate, but reflection and standing wave of actinic rays from substrate cause serious problems in lithography
Solution Approach 1:
The patent employs a composite material system consisting of photopolymerizable compound, photopolymerization initiator, and solvent. This composite formulation provides both the structural function of an underlayer coating and the optical function of an anti-reflective coating, eliminating reflection and standing wave issues while maintaining coating integrity.
Solution Approach 2:
The patent modifies the optical parameters of the underlayer coating by using photopolymerizable compounds with specific absorption characteristics. The composition is designed to absorb actinic radiation effectively, changing the optical properties to reduce reflection and standing wave formation from the substrate.
3Ease of manufacture
If organic material is used for anti-reflective coating on high aspect ratio substrate, then the coating can be applied, but filling property and flattening property are difficult to achieve simultaneously
Solution Approach 1:
The patent adjusts the rheological and physical parameters of the coating composition by selecting appropriate solvents and photopolymerizable compounds. This optimization enables the coating to flow into high aspect ratio structures effectively (filling property) while also forming a flat surface (flattening property), achieving both requirements simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition forms an underlayer coating with enhanced etching resistance and anti-reflective properties, preventing contamination and ensuring accurate pattern transfer, while avoiding the issues of high-temperature processing and substrate reflection, thus improving the manufacturing efficiency and quality of semiconductor devices.
Implementation Method 1
an underlayer coating forming composition for forming by light irradiation an underlayer coating... includes a polymerizable compound containing 5 to 45% by mass of silicon atom (A), a photopolymerization initiator (B)
Data Source
AI summary
There is provided an underlayer coating that is used as an underlayer of photoresists in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to the photoresists depending on the type of etching gas, does not intermix with the photoresists, and is capable of flattening the surface of a semiconductor substrate having holes of a high aspect ratio; and an underlayer coating forming composition for forming the underlayer coating. The underlayer coating forming composition for forming by light irradiation an underlayer coating used as an underlayer of a photoresist in a lithography process of the manufacture of semiconductor devices, includes a polymerizable compound containing 5 to 45% by mass of silicon atom (A), a photopolymerization initiator (B), and a solvent (C).