Silicon-Containing Resist Underlayer Film Composition for Defect Reduction
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in achieving fine patterning beyond the limits of existing ArF liquid immersion lithography, with increased dry etching processes leading to coating defects and reduced yield due to defects in silicon-containing resist underlayer films.
Innovation Solution
A composition for forming a silicon-containing resist underlayer film is developed, comprising specific silicon compounds obtained through hydrolysis and condensation reactions, which minimizes the formation of cage compounds and enhances adhesiveness and etching selectivity, thereby reducing coating defects and improving pattern transfer precision.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional silicon-containing compounds are used to form resist underlayer films, then the films can be formed, but cage compounds are generated as coating defects reducing yield
Solution Approach 1:
The invention extracts and eliminates the harmful cage compound formation mechanism by selecting specific silicon compounds (formula 1) that do not form cage structures during hydrolysis and condensation. The patent specifically avoids compounds that lead to cage compound generation, thereby removing the source of coating defects while maintaining the essential functionality of the resist underlayer film.
Solution Approach 2:
The invention changes the chemical parameters of the silicon-containing compounds by specifying particular molecular structures (formula 1 with specific R groups and n values). This parameter change in the chemical composition prevents cage compound formation during the sol-gel process, thereby eliminating coating defects and improving yield without compromising film formation.
2Manufacturing precision
If existing resist underlayer compositions are used, then pattern transfer can be performed, but adhesiveness and etching selectivity are insufficient
Solution Approach 1:
The invention optimizes the chemical parameters of the silicon-containing compounds by specifying particular molecular structures (formula 1 with specific R groups and n values). This parameter change in the chemical composition enhances both adhesiveness to the substrate and etching selectivity, thereby improving pattern transfer precision while maintaining reliability.
Solution Approach 2:
The invention creates a composite material system combining specific silicon compounds (formula 1) with controlled hydrolysis and condensation products. This composite approach provides both excellent adhesiveness to the substrate and high etching selectivity, enabling precise pattern transfer while resolving the contradiction between manufacturing precision and reliability.
3Manufacturing precision
If multiple dry etching processes are used for fine patterning, then resolution is improved, but coating defects increase and yield decreases
Solution Approach 1:
The invention performs preliminary action by forming a high-quality silicon-containing resist underlayer film before the multiple dry etching processes. The film is prepared with specific silicon compounds that prevent cage compound formation, thereby eliminating coating defects in advance. This preliminary preparation enables subsequent multiple dry etching processes to achieve fine patterning without introducing additional defects, maintaining both resolution and yield.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition significantly reduces coating defects and improves adhesiveness and etching selectivity, enabling precise pattern transfer and increasing yield in semiconductor manufacturing processes.
Implementation Method 1
a silicon-containing compound (A1) which is obtained by hydrolysis, condensation or hydrolysis-condensation of a silicon compound (A-1)
Implementation Method 2
a silicon-containing compound (A1) which is obtained by hydrolysis, condensation or hydrolysis-condensation of a silicon compound (A-1)
Data Source
AI summary
The present invention provides a composition for forming a silicon-containing resist under layer film comprises a silicon-containing compound (A1) which is obtained by hydrolysis, condensation or hydrolysiscondensation of a silicon compound (A-1) containing one or more compounds represented by the following general formula (1), wherein R represents an organic group having 1 to 6 carbon atoms, Ra, Rb and Rc each represents a substituted or unsubstituted monovalent organic group having 1 to 30 carbon atoms, w=0 or 1, x=0, 1, 2 or 3, y=0, 1 or 2, z=0, 1, 2 or 3; when w=0, 5≧x+z≧1, and the case where (x, z)=(1, 1), (3, 0) or (0, 3) are not included; and when w=1, 7≧x+y+z≧1, and the case where (x, y, z)=(1, 1, 1) is not included. There can be provided a composition for forming a silicon-containing resist under layer film which is to form a resist under layer film with extremely less number of coating defects, and excellent in adhesiveness in fine pattern and etching selectivity.