Silicon-Containing Resist Underlayer Film Composition for Semiconductor Patterning
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Solution Overview
Problem
Conventional resist underlayer films are inadequate for both positive and negative tone developments, leading to economic inefficiencies due to the need for dedicated equipment and poor adhesion and pattern transfer in miniaturized semiconductor manufacturing.
Innovation Solution
A silicon-containing resist underlayer film composition is developed, comprising specific hydrolysable silicon compounds obtained through hydrolysis-condensation reactions, which provides enhanced adhesion and etching selectivity, allowing for pattern transfer in both positive and negative tone developments without equipment changes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional resist underlayer films are used for positive tone development, then adhesion is adequate, but they fail to provide adequate adhesion and pattern transfer for negative tone development
Solution Approach 1:
The patent develops a resist underlayer film composition that functions effectively for both positive tone and negative tone development processes. The composition includes a polymer with carboxyl groups and a silicon-containing compound that reacts with the carboxyl groups, creating a universal underlayer film that provides adequate adhesion and pattern transfer for both development types, eliminating the need for separate dedicated films.
Solution Approach 2:
The patent modifies the chemical composition parameters of the resist underlayer film by incorporating specific polymers with carboxyl groups and silicon-containing compounds. This parameter change enables the underlayer film to interact differently with positive and negative tone resists, providing the necessary adhesion and etching selectivity for both development processes.
2Manufacturing precision
If dedicated equipment is used for positive and negative tone developments, then process performance is optimized, but economic efficiency decreases due to equipment costs
Solution Approach 1:
The patent creates a universal resist underlayer film composition that can be used in both positive and negative tone development processes with the same equipment. This eliminates the need for dedicated equipment for each process type, reducing capital investment and operational costs while maintaining adequate pattern transfer precision for both development methods.
3Productivity
If miniaturized process technologies are implemented, then device integration is increased, but adhesion and pattern transfer of resist underlayer films deteriorate
Solution Approach 1:
The patent employs a composite material system consisting of a polymer with carboxyl groups and a silicon-containing compound. This composite structure provides enhanced adhesion and etching selectivity that remains effective even in miniaturized processes, enabling successful pattern transfer at higher device integrations where conventional underlayer films fail.
Solution Approach 2:
The patent adjusts the chemical composition parameters of the resist underlayer film, specifically incorporating silicon-containing compounds that react with carboxyl groups to form crosslinked structures. This parameter modification enhances the film's adhesion and etching resistance properties, maintaining pattern transfer precision in miniaturized processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition ensures excellent storage stability, adhesion, and patterning performance in both positive and negative developments, preventing pattern fall and enabling precise transfer of fine patterns in semiconductor manufacturing.
Implementation Method 1
specific hydrolysable silicon compounds obtained through hydrolysis-condensation reactions
Implementation Method 2
enhanced adhesion and etching selectivity, allowing for pattern transfer in both positive and negative tone developments
Data Source
Figure 1
AI summary
The invention provides a composition for forming a silicon-containing resist underlayer film comprising: (A) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (1) and one or more hydrolysable compound shown by the following general formula (2), and (B) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (3) and one or more hydrolysable silicon compound shown by the following general formula (4). There can be provided a composition for forming a resist underlayer film applicable not only to a resist pattern obtained in a negative development but also to a resist pattern obtained in a conventional positive development, and a patterning process using this composition. R1m1R2m2R3m3Si(OR)(4-m1-m2-m3) (1) U(OR4)m4(OR5)m5 (2) R6m6R7m7R8m8Si(OR9)(4-m6-m7-m8) (3) Si(OR10)4 (4)