Dielectric-Filled Silicon RF Substrate for Lower Signal Loss
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor materials used in RF antenna systems for wireless devices suffer from high electromagnetic energy dissipation, leading to reduced radiation efficiency and limited bandwidth, especially in high-frequency applications.
Innovation Solution
The development of a package assembly with a structured silicon substrate featuring cavities filled with dielectric material and RF elements embedded within an insulating layer, reducing radiation loss by isolating RF components from the lossy substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If conventional semiconductor materials are used for substrate, then device integration is achieved, but electromagnetic energy dissipation increases
Solution Approach 1:
The substrate is segmented into distinct regions: a first substrate region and a second substrate region with different material compositions. The first region uses conventional semiconductor material for device integration, while the second region uses low-loss dielectric material for RF antenna support, thereby separating the functions and reducing overall energy dissipation.
Solution Approach 2:
Different regions of the substrate are assigned different material properties tailored to their specific functions. The first substrate region has properties suitable for semiconductor device integration, while the second substrate region has low-loss dielectric properties optimized for RF antenna performance, ensuring each area has the appropriate local quality for its purpose.
2Productivity
If conventional semiconductor materials are used, then manufacturing is simplified, but bandwidth is limited
Solution Approach 1:
The substrate is divided into functional regions with different materials. The first region maintains conventional semiconductor properties for manufacturing compatibility, while the second region introduces low-loss dielectric material to extend bandwidth capabilities for RF applications.
Solution Approach 2:
The substrate employs a composite structure combining conventional semiconductor material and low-loss dielectric material in a single integrated platform, allowing the system to benefit from both the manufacturing advantages of conventional materials and the performance advantages of low-loss materials for RF antennas.
3Device complexity
If RF elements are placed close to semiconductor devices, then integration density increases, but signal loss increases
Solution Approach 1:
The substrate is segmented into a first region for semiconductor devices and a second region for RF antennas, physically separating the two functional areas while maintaining integration on a single substrate. This reduces signal loss by isolating RF elements from the lossy semiconductor material.
Solution Approach 2:
A low-loss dielectric material is introduced as an intermediary substrate region between the semiconductor devices and RF antenna elements, serving as a mediator that allows close integration while minimizing electromagnetic energy dissipation and signal loss.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances radiation efficiency and bandwidth by minimizing signal loss, enabling the integration of high-frequency RF elements with improved performance in compact wireless devices.
Implementation Method 1
an insulating layer disposed over the first surface, the second surface, the first cavity wall, and the via wall; an electrical interconnection disposed within the via, wherein the insulating layer is disposed between the via wall and the electrical interconnection
Implementation Method 2
a package assembly with a structured silicon substrate featuring cavities filled with dielectric material and RF elements embedded within an insulating layer, reducing radiation loss by isolating RF components from the lossy substrate
Data Source
AI summary
The present disclosure relates to methods and apparatus for forming thin-form-factor reconstituted substrates and semiconductor device packages for radio frequency applications. The substrate and package structures described herein may be utilized in high-density 2D and 3D integrated devices for 4G, 5G, 6G, and other wireless network systems. In one embodiment, a silicon substrate is structured by laser ablation to include cavities for placement of semiconductor dies and vias for deposition of conductive interconnections. Additionally, one or more cavities are structured to be filled or occupied with a flowable dielectric material. Integration of one or more radio frequency components adjacent the dielectric-filled cavities enables improved performance of the radio frequency elements with reduced signal loss caused by the silicon substrate.