Semiconductor Silicon Sample Support for TEM Flatness

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Solution Overview

Problem

Conventional methods for fixing and forming minute samples using focusing ion beam (FIB) devices face issues such as sample loss, difficulty in reformation, expertise requirements, surface flatness problems, and increased background noise, particularly when using mesh supports for TEM observations.

Innovation Solution

A sample support with a terraced configuration formed using a semiconductor silicon process technique, where the silicon substrate is etched to a thickness of 10 μm or less, allowing for precise sample fixing without requiring expertise and minimizing background noise by adhering to a partially-cut mesh, enabling easy handling and additional forming post-fixation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a mesh support is used for fixing minute samples, then the sample can be fixed and observed by TEM, but the mesh surface has waviness and irregularities causing poor flatness and increased background noise

Engineering Contradiction:

Improvesurface flatnessVSAvoidbackground noise

Core Design Contradiction:

Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The invention extracts the sample support function from the mesh structure, creating a separate silicon-based support platform. The mesh is removed from the sample support area, eliminating its surface irregularities and background noise while retaining its structural support function in other areas.

Inventive Principle:

Principle #2Taking out (Extraction)

Solution Approach 2:

The invention uses a thin silicon substrate (10 μm or less) as a disposable-like support structure that can be easily fabricated and replaced. This thin substrate provides a flat surface without the durability concerns of reusable meshes, achieving high flatness at low cost through standard semiconductor processes.

Inventive Principle:

Principle #27Cheap short-living objects (Disposable)

2Object-affected harmful factors

If the thickness of the sample support is reduced to lower background noise, then the background noise is reduced, but the handling becomes difficult and the support loses strength

Engineering Contradiction:

Improvebackground noiseVSAvoidmechanical strength

Core Design Contradiction:

Object-affected harmful factorsVSStrength

Solution Approach 1:

The invention creates a composite structure by adhering the thin silicon substrate to a thicker mesh support. The thin silicon layer (10 μm or less) provides low background noise for TEM observation, while the thicker mesh substrate beneath it provides mechanical strength and handling stability.

Inventive Principle:

Principle #40Composite materials

Solution Approach 2:

The support structure is segmented into two functional parts: a thin silicon substrate layer for low-background sample support and a thicker mesh substrate for mechanical strength. This segmentation allows each layer to optimize its specific function without compromising the other.

Inventive Principle:

Principle #1Segmentation

3Manufacturing precision

If manual dicing is used to prepare the sample support, then high-quality flat surfaces can be obtained, but the process requires expertise and is difficult to manufacture on a mass production basis

Engineering Contradiction:

Improvesurface flatnessVSAvoidmass production capability

Core Design Contradiction:

Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The invention replaces manual mechanical dicing with automated semiconductor fabrication processes including photolithography, etching, and adhesion. These automated processes achieve sub-micron level flatness (0.1 μm or less) while enabling mass production without requiring operator expertise.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The invention changes the manufacturing parameters from manual mechanical cutting to controlled chemical etching and lithographic patterning. This parameter change enables precise thickness control (10 μm or less) and surface flatness (0.1 μm or less) through standardized semiconductor processes that can be mass-produced.

Inventive Principle:

Principle #35Parameter changes

4Strength

If the sample support is made thicker to increase strength, then the mechanical strength is improved, but the forming time is prolonged corresponding to the thickness

Engineering Contradiction:

Improvemechanical strengthVSAvoidforming time

Core Design Contradiction:

StrengthVSLoss of time

Solution Approach 1:

The support structure is segmented into a thin silicon substrate layer (10 μm or less) for low-background observation and a separate thicker mesh substrate for mechanical strength. This segmentation allows the silicon layer to be formed quickly with minimal etching time while the mesh substrate provides the necessary strength without adding to the forming time of the critical sample support area.

Inventive Principle:

Principle #1Segmentation

Data Source

PatentUS7345289B2Sample support prepared by semiconductor silicon process technique

Publication Date: 2008.03.18 HITACHI HIGH TECH SCIENCE CORP

AI summary

A sample support of the present invention is prepared such that a silicon substrate is used as a raw material, the thickness structure having a shape and a thickness of 10 μm or less is prepared using a semiconductor silicon process technique. The sample support of the present invention is adhered to a partially-cut mesh in a state that a sample portion is not adhered. Further, a plurality of portions where the samples are mounted is arranged on the same substrate.