Silicon Seed Layer Formation via Low-Temperature Chemical Conversion
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current methods for manufacturing advanced semiconductor devices lack a process to convert silicon dioxide into silicon at relatively low temperatures, which is essential for forming sophisticated integrated circuits.
Innovation Solution
A method involving the use of a halogen-containing gas to convert silicon dioxide into a silicon-salt layer, followed by a hydrogen-containing gas or hydrogen radicals to convert the silicon-salt layer into a silicon layer, both processes performed at temperatures less than 50°C.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional high-temperature processing is used to convert silicon dioxide to silicon, then the conversion can be achieved, but the process requires high temperatures which complicates manufacturing and increases energy consumption
Solution Approach 1:
The patent changes the chemical parameters of the reaction system by introducing halogen-containing gases (Cl2, HCl, CF3H) and hydrogen-containing gases (H2, silane) to enable silicon dioxide conversion at low temperatures (25-50°C). This parameter change transforms the reaction pathway from high-temperature thermal processes to low-temperature chemical vapor deposition and reduction reactions
Solution Approach 2:
The patent replaces the mechanical/thermal system (high-temperature heating) with a chemical system (gas-phase reactions). Instead of using thermal energy to drive the conversion, the invention uses chemical reactions between halogen-containing gases, hydrogen-containing gases, and silicon dioxide to achieve the transformation at low temperatures
2Temperature
If high-temperature processing is used to form silicon layers, then silicon conversion is achieved, but energy consumption increases
Solution Approach 1:
The patent changes the energy parameters by introducing chemical reactants (halogen-containing and hydrogen-containing gases) that provide the necessary activation energy through chemical reactions rather than thermal heating. This enables the process to proceed at 25-50°C with significantly reduced energy consumption compared to conventional high-temperature processing
3Manufacturing precision
If conventional methods are used to form silicon seed layers, then silicon layers can be formed, but high-temperature processing is required which limits process integration
Solution Approach 1:
The patent changes the temperature parameter from conventional high-temperature processing to low-temperature range (25-50°C), enabling process integration with temperature-sensitive structures and materials. This parameter change allows the silicon seed layer formation to be integrated into advanced semiconductor manufacturing processes that require low-temperature steps
Solution Approach 2:
The patent introduces halogen-containing gases as intermediary substances that facilitate the conversion of silicon dioxide to silicon at low temperatures. These intermediary chemicals enable the reaction to proceed through a different pathway that is compatible with low-temperature process integration
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the formation of silicon seed layers and layers of silicon-containing material at low temperatures, facilitating the production of advanced integrated circuit devices without the need for high-temperature processing.
Implementation Method 1
performing at least one first process operation on the layer of silicon dioxide with a halogen-containing gas to convert at least a portion of the layer of silicon dioxide into a silicon-salt layer
Implementation Method 2
performing at least one second process operation on the silicon-salt layer using a gas comprising hydrogen or hydrogen radicals to convert at least a portion of the silicon-salt layer to a layer of silicon
Data Source
AI summary
Disclosed herein are various methods of forming a silicon seed layer and layers of silicon and silicon-containing material therefrom. In one example, the method includes forming a layer of silicon dioxide above a structure, converting at least a portion of the layer of silicon dioxide into a silicon-salt layer and converting at least a portion of the silicon-salt layer to a layer of silicon.