Single-Crystal Silicon Showerhead Surface for Uniform Plasma Etching
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Solution Overview
Problem
In semiconductor device fabrication, existing semiconductor etching showerheads face issues with non-uniform hole formation due to pin vibration during ultrasonic drilling, leading to defects and contamination in plasma processes, particularly with materials like silicon carbide which require precise surface properties for optimal performance.
Innovation Solution
A component for semiconductor device fabrication using single-crystal silicon with specific surface properties, including contact angles, surface energies, and Si—OH ratios, integrated into a focus ring and upper electrode to prevent contamination and enhance plasma flowability, thereby minimizing defects and wear.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If ultrasonic waves are applied to drill holes in a thick showerhead, then holes can be formed, but the pin vibrates causing non-uniform hole formation
Solution Approach 1:
The patent applies preliminary action by pre-coating the pin with a specific material layer before ultrasonic drilling. This preparatory step modifies the pin's surface properties to reduce vibration during the drilling process, thereby achieving more uniform hole formation in the showerhead.
Solution Approach 2:
The patent changes the physical-chemical parameters of the pin by applying a coating with specific surface energy characteristics (water contact angle of 45° to 74° and diiodomethane contact angle of 41° to 57°). This parameter modification reduces the pin's vibration during ultrasonic drilling, improving hole uniformity.
2Reliability
If conventional materials are used for showerhead components, then manufacturing is easier, but defects and contamination occur in plasma processes
Solution Approach 1:
The patent changes the surface properties of the component by applying a coating with specific contact angles (water: 45° to 74°, diiodomethane: 41° to 57°). This parameter modification suppresses defects and contamination in plasma processes while maintaining manufacturability through established coating techniques.
Solution Approach 2:
The patent uses composite materials by applying a specialized coating layer on top of the base component material. This composite structure combines the mechanical properties of the base material with the surface properties of the coating, achieving both defect suppression and ease of manufacture.
3Strength
If silicon carbide is used to reinforce components, then wear resistance and high-temperature strength improve, but surface properties may not be optimal for plasma processes
Solution Approach 1:
The patent applies local quality by using silicon carbide reinforcement in the bulk material to provide wear resistance and high-temperature strength, while applying a specialized coating on the surface to achieve precise surface properties (specific contact angles) optimal for plasma processes. This separates the bulk mechanical requirements from the surface plasma requirements.
Solution Approach 2:
The patent uses composite materials by combining silicon carbide-reinforced base material with a surface coating layer. The silicon carbide provides enhanced mechanical properties in the bulk, while the coating provides the precise surface properties needed for plasma processes, resolving the contradiction between strength and surface precision.
Data Source
AI summary
The present invention provides a component for a semiconductor device fabrication apparatus, a semiconductor device fabrication apparatus including the same, and a method of fabricating a semiconductor device, wherein the component includes single-crystal silicon, wherein, on at least one surface thereof, a water contact angle is 45° to 74° and a diiodomethane contact angle is 41° to 57°.