Silicon-SiC Heterostructure for Integrated Photon Emission and Detection
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current single-photon light-emitter (SPLE) devices face challenges in miniaturization and integration with silicon photodetectors, such as Geiger-mode avalanche photodiodes, due to the use of different semiconductor materials for emitters and receivers.
Innovation Solution
The development of an optoelectronic device that integrates a silicon diode and a silicon-carbide emitter within the same die, utilizing a semiconductor heterostructure that includes a silicon substrate, silicon epitaxial layers, and a silicon-carbide buffer and top epitaxial layers, allowing for efficient emission and detection of photons.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If different semiconductor materials are used for emitters and receivers, then emission and detection efficiency are improved, but integration difficulty and device complexity increase
Solution Approach 1:
The patent combines the emitter and receiver into a single integrated device structure, merging previously separate components into one unified optoelectronic device that achieves both emission and detection functions within the same integrated platform
Solution Approach 2:
The patent introduces a silicon carbide layer as an intermediary material between the silicon substrate and the emitter structure, facilitating the integration of different semiconductor materials while managing material compatibility and enabling successful heterostructure formation
2Reliability
If silicon carbide emitter is used, then single-photon emission capability is improved, but miniaturization is reduced
Solution Approach 1:
The patent modifies structural parameters of the emitter and receiver components, optimizing their dimensions and configurations to achieve miniaturization while preserving the single-photon emission capability provided by the silicon carbide material
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This integrated optoelectronic device achieves high efficiency in both emission and detection, particularly in the near infrared, while being compatible with CMOS processes and allowing for miniaturization and convenient packaging.
Implementation Method 1
an emitter (2) made of a semiconductor material with wide band gap... capable of emitting photons when electrically or optically excited
Implementation Method 2
a receiver (4) arranged to detect photons emitted by the emitter (2)
Data Source
AI summary
An optoelectronic device with a semiconductor body that includes: a bottom cathode structure, formed by a bottom semiconductor material, and having a first type of conductivity; and a buffer region, arranged on the bottom cathode structure and formed by a buffer semiconductor material different from the bottom semiconductor material. The optoelectronic device further includes: a receiver comprising a receiver anode region, which is formed by the bottom semiconductor material, has a second type of conductivity, and extends in the bottom cathode structure; and an emitter, which is arranged on the buffer region and includes a semiconductor junction formed at least in part by a top semiconductor material, different from the bottom semiconductor material.