Silicon Sidewall Lining for Stable Soft Pattern Transfer

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Solution Overview

Problem

Semiconductor device fabrication faces challenges with soft/organic features collapsing or leaning due to increased aspect ratios and reduced feature sizes, leading to poor pattern transfer and high defectivity.

Innovation Solution

Lining soft/organic features with a silicon-containing material to provide mechanical support, using methods such as spin-coating and etching to form a lining structure that stabilizes these features during fabrication processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If soft/organic features are used in semiconductor fabrication, then pattern transfer capability is improved, but structural stability deteriorates due to high aspect ratios and reduced feature sizes

Engineering Contradiction:
Improvepattern transfer capabilityVSAvoidstructural stability
Core Design Contradiction:
Manufacturing precisionVSStability of the object's composition

Solution Approach 1:

A silicon-containing material is deposited as an intermediary lining layer on the sidewalls of soft/organic features. This lining material acts as a mediator that provides mechanical support and structural stability to the soft features during fabrication processes, enabling better pattern transfer without compromising the integrity of the original soft material structure

Inventive Principle:
Principle #24Intermediary (Mediator)

2Length of moving object

If feature size is reduced and aspect ratio is increased, then device scaling is achieved, but feature stability deteriorates leading to collapse and leaning

Engineering Contradiction:
Improvefeature sizeVSAvoidfeature stability
Core Design Contradiction:
Length of moving objectVSStability of the object's composition

Solution Approach 1:

The silicon-containing lining material is selectively deposited only on the sidewalls of the features, providing localized mechanical support precisely where needed. This local reinforcement approach maintains the overall scaled dimensions while preventing collapse and leaning at the critical sidewall regions during subsequent fabrication steps

Inventive Principle:
Principle #3Local quality

3Strength

If silicon-containing material is deposited on soft features, then mechanical support is provided, but material complexity increases

Engineering Contradiction:
Improvemechanical supportVSAvoidmaterial complexity
Core Design Contradiction:
StrengthVSDevice complexity

Solution Approach 1:

The structure combines soft/organic materials with silicon-containing material to create a composite feature structure. The silicon lining provides the necessary mechanical strength and stability, while the soft material maintains its pattern transfer properties, achieving a synergistic combination that resolves the contradiction between mechanical support and material simplicity

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enhances pattern transfer and stability of soft/organic features, particularly at reduced pitch and increased aspect ratios, reducing defects and improving fabrication outcomes.

Implementation Method 1

depositing the silicon-containing material with at least one of the following silicon-containing precursors: SiF4 or SiCl4

Methodology Applied
Scientific EffectChemical Vapour Deposition: Chemical Vapour Deposition

Data Source

PatentUS12506005B2Methods and structures for increasing stability of soft or organic features
Publication Date: 2025.12.23 TOKYO ELECTRON LTD
  • US12506005B2 patent drawing
  • US12506005B2 patent drawing
  • US12506005B2 patent drawing

AI summary

The present disclosure relates to methods and structures of increasing stability of soft or organic features. The methods disclosed herein may include lining soft/organic features with a lining material, depositing a lining material on the soft/organic features, or otherwise fabricating a lining structure. This provides mechanical support for the soft/organic features, thereby increasing stability of the soft/organic features. The methods, structures, and techniques described herein provide mechanical support for a soft/organic feature, thereby enabling better pattern transfer through semiconductor device fabrication processes, especially at reduced pitch and increased aspect ratio. A method for fabricating semiconductor devices may include spin-coating a patternable material on a substrate, patterning the patternable material to form a pattern including one or more protruding structures, and lining sidewalls of each of the one or more protruding structures with a silicon-containing material.