Silicon-SiO2 Waveguide Connection Structure for Low-Loss Coupling

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Solution Overview

Problem

The challenge lies in connecting silicon optical waveguides with single-mode fibers (SMFs) due to significant differences in mode field diameters (MFD), leading to high coupling losses and inefficiencies in light transmission.

Innovation Solution

An optical waveguide connection structure is designed with a ridge structure and patterned over-clad layer to align the centers of silicon and SiO2 waveguides, utilizing materials with specific refractive indices to minimize loss through adiabatic and butt-coupling transitions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of operation

If direct connection between silicon optical waveguide and single-mode fiber is made, then connection simplicity is improved, but coupling loss increases significantly

Engineering Contradiction:
Improveconnection simplicityVSAvoidcoupling loss
Core Design Contradiction:
Ease of operationVSLoss of energy

Solution Approach 1:

The patent introduces an intermediate structure consisting of a ridge waveguide and a mode field adapter between the silicon optical waveguide and the single-mode fiber. This intermediary structure gradually transforms the mode field diameter from the small size of the silicon waveguide to the larger size of the SMF, enabling efficient coupling while maintaining connection simplicity.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent employs parameter changes by varying the refractive index distribution and geometric dimensions along the propagation direction. The mode field adapter uses a gradually changing refractive index profile and dimensional transition to adiabatically transform the optical mode, reducing coupling loss between waveguides with different mode field diameters.

Inventive Principle:
Principle #35Parameter changes

2Area of moving object

If mode field diameter of silicon waveguide is kept small for high-density integration, then integration density is improved, but connection efficiency to SMF deteriorates

Engineering Contradiction:
Improvewaveguide cross-sectional areaVSAvoidcoupling loss
Core Design Contradiction:
Area of moving objectVSLoss of energy

Solution Approach 1:

The patent segments the connection structure into multiple functional sections: a silicon ridge waveguide section for maintaining small mode field, a mode field adapter section for gradual transformation, and a coupling section for SMF connection. This segmentation allows each section to be optimized for its specific function while working together to solve the overall coupling problem.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent addresses the mode field diameter mismatch by introducing dimensional changes in the vertical dimension through the ridge structure and in the transverse dimension through the mode field adapter. This multi-dimensional approach enables gradual mode field transformation while maintaining the compact footprint required for high-density integration.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Loss of energy

If ridge structure and patterned over-clad layer are added to align waveguide centers, then coupling efficiency is improved, but device complexity increases

Engineering Contradiction:
Improvecoupling lossVSAvoidstructure complexity
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The patent merges the ridge waveguide structure with the mode field adapter function into a single integrated structure. The patterned over-clad layer is combined with the ridge structure to simultaneously achieve mechanical alignment and optical mode transformation, reducing the number of separate components while improving coupling efficiency.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The ridge structure serves multiple functions: it provides mechanical support, defines the waveguide core, creates the mode field confinement, and enables alignment with the SMF. The patterned over-clad layer similarly serves both as an alignment reference and as part of the mode transformation structure, demonstrating multi-functionality that reduces overall device complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively reduces coupling loss by aligning the mode fields, ensuring high efficiency and reliability in connecting waveguides with vastly different sizes.

Implementation Method 1

utilizing materials with specific refractive indices to minimize loss through adiabatic and butt-coupling transitions

Methodology Applied
Scientific EffectAdiabatic coupling:

Implementation Method 2

utilizing materials with specific refractive indices to minimize loss through adiabatic and butt-coupling transitions

Methodology Applied
Scientific EffectButt-coupling:

Implementation Method 3

The silicon thin wire waveguide is constituted by a silicon thin wire waveguide having a core made of Si and a cladding layer made of SiO2. A specific refractive index difference between a core and a clad layer of the silicon thin wire waveguide is about 40%

Methodology Applied
Scientific EffectTotal internal reflection: Total Internal Reflection

Data Source

PatentUS20250370186A1Optical waveguide connection structure
Publication Date: 2025.12.04 NT T INC
  • US20250370186A1 patent drawing
  • US20250370186A1 patent drawing
  • US20250370186A1 patent drawing

AI summary

An optical waveguide connection structure which connects a silicon optical waveguide and an SiO2 optical waveguide is constituted by an under-clad layer formed on an upper surface of a support substrate; a ridge structure formed on an upper surface of the under-clad layer; a silicon core being in contact with the ridge structure; a pattern structure which is in contact with the silicon core, has a shape and a size coincident to the silicon core in a top view, and has a refractive index lower than that of the silicon core; an SiO2 core which covers the ridge structure, the pattern structure and the silicon core, and has a refractive index lower than the silicon core and higher than the under-clad-layer; and an over-clad layer which is in contact with the SiO2 core and has a refractive index lower than that of the SiO2 core.