Silicon Thin-Film Solar Cell Light-Scattering Substrate
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Solution Overview
Problem
Silicon thin-film solar cells have low efficiency due to limited light absorption in thick silicon layers, which cannot be used in prior art methods.
Innovation Solution
A method involving a glass substrate exposed to electron beams with heating to create a light-scattering layer, followed by applying a TCO layer and multiple silicon layers, where the silicon layers are treated with laser or electron beams to increase absorption, allowing for thicker second silicon layers for enhanced efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If thick silicon layers are used to increase light absorption, then absorption efficiency improves, but manufacturing complexity and cost increase due to inability to use conventional methods
Solution Approach 1:
The glass substrate is pre-treated with electron beam irradiation and heating to create a light-scattering layer before applying the TCO and silicon layers. This preliminary structuring of the substrate enables enhanced light absorption in subsequently applied silicon layers without requiring excessively thick silicon deposits, thus improving energy absorption efficiency while maintaining manageable manufacturing complexity
Solution Approach 2:
The patent applies electron beam irradiation and thermal treatment to transform the glass substrate surface, creating a light-scattering layer with modified optical properties. This parameter change in the substrate's optical characteristics enables improved light absorption in the silicon layers without increasing silicon layer thickness or manufacturing complexity
2Loss of energy
If the glass substrate is heated to high temperature during electron beam exposure, then light-scattering structures are formed, but energy consumption increases
Solution Approach 1:
The patent replaces conventional thermal heating methods with electron beam irradiation to achieve the required heating effect. The electron beam delivers both thermal energy and simultaneous structural modification to the glass substrate, creating light-scattering centers in a single integrated process step, thereby reducing overall energy consumption compared to separate heating and irradiation processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method increases light absorption by scattering unabsorbed light through the silicon layers, resulting in higher solar cell efficiency and durability.
Implementation Method 1
The light to be absorbed by the solar cell can be scattered by this light-scattering layer in such a way that parts of this light are deflected to the side or run at an angle greater than 0° to the normal of incidence
Implementation Method 2
the glass substrate is exposed to electron beams, so that a light-scattering layer of the glass substrate is formed
Implementation Method 3
The irradiation with the electron beam with simultaneous heating can at least partially cause lighter components of the glass to diffuse out of the surface
Implementation Method 4
a TCO layer is applied to the structured glass substrate and a silicon layer is applied to the TCO layer
Implementation Method 5
the first silicon layer is exposed to laser radiation or electron beams
Data Source
Figure 1~3
AI summary
The invention relates to a method for producing a solar cell, in particular a silicon thin-film solar cell, wherein a TCO layer (3) is applied to a glass substrate (1) and at least one silicon layer (4, 5) is applied to the TCO layer (3). Before the TCO layer (3) is applied, electron radiation is applied to the glass substrate (1), such that a light-scattering layer (2) of the glass substrate (1) is produced, to which light-scattering layer the TCO layer (3) is applied. Alternatively or additionally, according to the invention, a first silicon layer (4) can be applied to the TCO layer (3), a laser radiation or electron radiation can be applied to the first silicon layer (4), and a second silicon layer (5) can be applied to the irradiated first silicon layer (4).