Silicon Substrate Removal Solution for Fluorocarbon Film
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Solution Overview
Problem
Existing methods for producing silicon substrates for liquid ejection heads face challenges in effectively removing fluorocarbon deposition films without causing base metal corrosion, particularly due to the cell effect when using hydroxylamine-based solutions.
Innovation Solution
A method involving a removal solution with a primary amine and an organic polar solvent, where the water content is 10 mass % or lower and tetramethylammonium hydroxide is 1 mass % or lower, is used to dissolve fluorocarbon deposition films while minimizing base metal corrosion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If hydroxylamine-based removal solution is used to dissolve fluorocarbon deposition films, then the deposition film removal effectiveness is improved, but base metal corrosion occurs due to the cell effect
Solution Approach 1:
The patent changes the chemical composition parameters of the removal solution by replacing hydroxylamine with a primary amine (such as ethylenediamine, diethylenetriamine, or triethanolamine) combined with an organic polar solvent. This parameter change maintains the deposition film removal effectiveness while eliminating the cell effect that causes base metal corrosion, as the primary amine does not generate the same electrochemical reactions as hydroxylamine.
Solution Approach 2:
The patent introduces an organic polar solvent as an intermediary substance to enhance the removal solution's effectiveness. The organic polar solvent (such as N-methyl-2-pyrrolidone, N,N-dimethylformamide, or dimethyl sulfoxide) works synergistically with the primary amine to dissolve the fluorocarbon deposition film, providing an alternative mechanism that does not rely on hydroxylamine's corrosive action.
2Manufacturing precision
If water content in removal solution is increased to improve dissolution ability, then deposition film removal effectiveness is improved, but base metal corrosion is promoted due to OH- generation
Solution Approach 1:
The patent changes the water content parameter to 10 mass% or lower, and limits tetramethylammonium hydroxide to 1 mass% or lower. This parameter optimization reduces OH- generation while maintaining effective deposition film removal through the primary amine and organic polar solvent combination, thereby preventing metal corrosion.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach successfully dissolves fluorocarbon deposition films and suppresses base metal corrosion, ensuring the integrity of the silicon substrate and liquid ejection head components.
Implementation Method 1
a removal step of removing, by a removal solution, the deposition film formed by the fluorocarbon gas; the removal solution comprises a primary amine and an organic polar solvent
Implementation Method 2
a content of water in the removal solution is 10 mass % or lower; and a content of tetramethylammonium hydroxide in the removal solution is 1 mass % or lower
Data Source
AI summary
A method for producing a silicon substrate comprising a silicon base material; and a wiring formation layer laminated on a base material surface of the silicon base material, and being provided with a wiring member, an electrode member comprising a noble metal, and a close contact member comprising a base metal between the wiring member and the electrode member, wherein the method comprises a step of forming a deposition film by a fluorocarbon gas, in etching of the silicon substrate; and a removal step of removing, by a removal solution, the deposition film formed by the fluorocarbon gas; the removal solution comprises a primary amine and an organic polar solvent; a content of water in the removal solution is 10 mass % or lower; and a content of tetramethylammonium hydroxide in the removal solution is 1 mass % or lower.