Silicon Substrate Through Hole Etching via Intermediate Layer Mask
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Solution Overview
Problem
Conventional methods for manufacturing liquid discharge heads face challenges in achieving high accuracy and yield for second through holes, leading to uneven liquid supply characteristics due to variations in etching speed across silicon substrates.
Innovation Solution
A method involving bonding of silicon substrates via an intermediate layer with a specific pattern form, using dry etching to form openings, where the intermediate layer acts as a stopper and mask to ensure consistent etching and prevent crown-like residues or bent openings.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional etching is used to form second through holes, then the manufacturing process is simple, but the accuracy and uniformity of hole shapes deteriorate due to uneven etching speeds across different regions
Solution Approach 1:
An intermediate layer is introduced between the first and second silicon substrates. This intermediate layer serves as a mediator that stops the first etching process and provides a uniform starting surface for the second etching process, thereby eliminating the effect of uneven first etching speeds on the final hole shape accuracy
Solution Approach 2:
The manufacturing process is divided into separate stages: first etching to form first through holes, then bonding substrates with intermediate layer, and finally second etching to form second through holes. This segmentation allows each etching process to be independently controlled and optimized, improving overall precision
2Productivity
If etching speed varies across silicon substrate regions, then the manufacturing process is fast, but the uniformity of liquid supply characteristics deteriorates due to uneven second through hole sizes
Solution Approach 1:
The intermediate layer acts as a mediator that decouples the first and second etching processes. By providing a uniform reference surface for the second etching, it ensures that variations in first etching speed do not propagate to affect the uniformity of second through hole sizes and liquid supply characteristics
Solution Approach 2:
The intermediate layer is prepared and bonded in advance before the second etching process. This preliminary action establishes a uniform baseline surface that ensures consistent second through hole formation regardless of variations in previous etching steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of second through holes with high accuracy and stability, improving the liquid supply characteristics and yield by separating the etching processes for common liquid chambers and supply ports, allowing for precise control and detection of etching endpoints.
Implementation Method 1
forming a first opening by executing first dry etching down to a depth at which the intermediate layer is exposed
Implementation Method 2
forming a first opening by executing first dry etching down to a depth at which the intermediate layer is exposed
Implementation Method 3
forming a second opening by executing second dry etching by using the intermediate layer as a mask
Implementation Method 4
bonding a first silicon substrate and a second silicon substrate together via an intermediate layer
Data Source
Figure 1A~1D
Figure 1E~1G
Figure 1H~2B
AI summary
A method for processing a silicon substrate includes providing a combination of a first silicon substrate, a second silicon substrate, and an intermediate layer including a plurality of recessed portions, which is provided between the first silicon substrate and the second silicon substrate, forming a first through hole that goes through the first silicon substrate by executing etching of the first silicon substrate on a surface of the first silicon substrate opposite to a bonding surface with the intermediate layer by using a first mask, and exposing a portion of the intermediate layer corresponding to the plurality of recessed portions of the intermediate layer, forming a plurality of openings on the intermediate layer by removing a portion constituting a bottom of the plurality of recessed portions, and forming a second through hole that goes through the second silicon substrate by executing second etching of the second silicon substrate by using the intermediate layer on which the plurality of openings are formed as a mask.