Silicon Supply Part Reducing Melt Spattering in Ingot Growth

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Solution Overview

Problem

The spattering of silicon melt during the injection of polycrystalline silicon into a crucible in silicon single crystal ingot growth devices causes damage to the crucible and other equipment.

Innovation Solution

A silicon supply part with a cone-shaped stopper and cable system that controls the flow of polycrystalline silicon into the melt, reducing the spattering phenomenon by ensuring a controlled and gentle introduction of silicon into the crucible.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If polycrystalline silicon is injected into the crucible from a height difference, then the filling efficiency is improved, but spattering of silicon melt occurs causing damage to the crucible and equipment

Engineering Contradiction:
Improvefilling efficiencyVSAvoidspattering damage
Core Design Contradiction:
ProductivityVSObject-affected harmful factors

Solution Approach 1:

A guide structure is introduced as an intermediary component between the injection tube and the crucible. The guide extends downward from the tube and provides a controlled path for the polycrystalline silicon to enter the melt, reducing direct impact and spattering while maintaining efficient filling

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The guide structure extends in the vertical dimension downward from the injection tube toward the crucible. This vertical extension creates a gradual transition path, transforming the direct vertical drop into a controlled descent along the guide surface, thereby reducing impact velocity and spattering

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Quantity of substance

If the stopper is moved downward to supply polysilicon, then the material transfer is improved, but the impact velocity increases causing spattering

Engineering Contradiction:
Improvematerial transferVSAvoidimpact velocity
Core Design Contradiction:
Quantity of substanceVSSpeed

Solution Approach 1:

The guide structure serves as a mediator between the stopper-driven polysilicon flow and the silicon melt. It converts the high-velocity direct impact into a lower-velocity flow along the guide surface, enabling material transfer while controlling impact speed

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The guide structure is positioned in advance above the crucible to prepare a controlled entry path for the polysilicon. This preliminary arrangement ensures that the material is gradually directed into the melt rather than dropped directly, reducing impact velocity before contact

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS11255023B2Silicon supply part, and device and method for growing silicon monocrystalline ingot comprising same
Publication Date: 2022.02.22 SK SILTRON CO LTD
  • US11255023B2 patent drawing
  • US11255023B2 patent drawing
  • US11255023B2 patent drawing

AI summary

An embodiment provides a silicon supply part including: a silicon supply chamber; a holder provided on an inner wall of a lower region of the silicon supply chamber; a tube elevating vertically by a first cable inside the silicon supply chamber; a guide provided outside the tube and overlapped with the holder vertically; and a stopper elevating vertically by a second cable and inserted into a lower portion of the tube to open and close the lower portion of the tube.