Silicon Surface Modifier for Dual-Tone Resist Underlayer Films
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Solution Overview
Problem
Conventional resist underlayer films are inadequate for both positive and negative tone developments, leading to economic disadvantages due to the need for dedicated equipment and poor performance in transferring patterns with high resolution and low line edge roughness.
Innovation Solution
A silicon-containing surface modifier with specific repeating units and a polysiloxane compound is used to create a resist underlayer film that can handle both positive and negative tone developments, ensuring good adhesion and preventing pattern fall with improved etching selectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional resist underlayer films are used for positive tone development, then good adhesion is achieved, but they cannot handle negative tone development without dedicated equipment
Solution Approach 1:
The patent develops a resist underlayer film composition that can be universally used for both positive tone and negative tone developments. The composition contains a polysiloxane compound with specific structural formulas that provide universal compatibility, eliminating the need for separate dedicated films for different development modes and reducing equipment complexity
2Manufacturing precision
If conventional resist underlayer films are used, then manufacturing is simpler, but pattern transfer precision and resolution are insufficient
Solution Approach 1:
The patent employs composite material design by combining polysiloxane compounds with specific structural formulas (containing silicon-oxygen backbones with organic side groups) to achieve superior pattern transfer precision and resolution. This composite structure provides both the manufacturing precision needed for fine features and the chemical properties required for effective pattern transfer
3Manufacturing precision
If thin photoresist films are used to achieve finer features, then resolution improves, but pattern fall occurs without adequate underlayer support
Solution Approach 1:
The patent introduces a specially formulated resist underlayer film as an intermediary between the substrate and the photoresist. This underlayer film, composed of polysiloxane compounds with specific structures, acts as a mediator that provides adequate support and adhesion for thin photoresist films, preventing pattern fall while enabling the resolution benefits of thin film usage
4Manufacturing precision
If high resolution patterning is pursued, then line edge roughness decreases, but etching selectivity requirements increase
Solution Approach 1:
The patent utilizes parameter changes in the chemical composition of the resist underlayer film, specifically employing polysiloxane compounds with adjustable structural parameters (such as side group types and molecular weights). These parameter adjustments optimize the etching selectivity to match high resolution patterning requirements, enabling precise line edge control while maintaining appropriate etching performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The silicon-containing resist underlayer film composition enables the formation of patterns with good surface roughness and adhesion in both positive and negative developments, preventing pattern fall and allowing for precise transfer of fine features, even with thin photoresist films, while optimizing equipment and quality control.
Implementation Method 1
ensuring good adhesion and preventing pattern fall
Data Source
Figure 1(I-A)~1
AI summary
The present invention provides a silicon-containing surface modifier wherein the modifier contains one or more of a repeating unit shown by the following general formula (A) and a partial structure shown by the following general formula (C).The present invention has an object to provide a resist underlayer film applicable not only to a negatively developed resist pattern formed by a hydrophilic organic compound but also to a conventional positively developed resist pattern formed by a hydrophobic compound.