Silicon Surface Modifier for Resist Lower Layer Adhesion
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Solution Overview
Problem
Conventional resist lower layer films fail to prevent pattern collapse during negative development in photolithography, especially for hydrophilic organic compound-based resist patterns, due to mismatched contact angles with the resist upper layer, leading to poor adhesion and increased roughness.
Innovation Solution
A silicon-containing surface modifier with specific repeating units, such as those represented by general formula (A) and (B), is incorporated into a polysiloxane compound to form a resist lower layer film with a contact angle closer to that of the negatively developed upper layer resist, enhancing adhesion and preventing pattern collapse. The composition also includes a solvent with a boiling point of 180°C or higher for improved film properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a conventional resist lower layer film is used, then the film formation process is simple, but the adhesion to hydrophilic organic compound-based resist upper layer is poor causing pattern collapse
Solution Approach 1:
The resist lower layer film uses a composite composition comprising a polysiloxane compound as the base polymer and a silicon-containing surface modifier as additive. This composite structure combines the film-forming capability of polysiloxane with the adhesion-promoting functionality of the surface modifier containing hydroxyl groups, achieving both good adhesion to hydrophilic resist and controlled film properties without excessive complexity
Solution Approach 2:
The surface modifier is applied specifically at the interface between the resist lower layer film and the resist upper layer. By concentrating the adhesion-promoting hydroxyl groups at this critical interface region rather than uniformly throughout the entire film, the invention achieves localized improvement in adhesion strength where it is most needed, while maintaining overall film integrity
2Reliability
If the contact angle of resist lower layer film is not matched with resist upper layer, then the film formation is easier, but pattern collapse occurs during negative development
Solution Approach 1:
The invention controls the contact angle of the resist lower layer film by adjusting the composition ratio between the polysiloxane compound and the silicon-containing surface modifier, as well as by controlling the hydroxyl group content in the surface modifier. This parameter optimization ensures the contact angle matches that of the hydrophilic organic compound-based resist upper layer, preventing pattern collapse during negative development while maintaining manufacturing feasibility
3Manufacturing precision
If conventional positive development is used, then the process is well-established, but resolution for extremely fine hole patterns is insufficient
Solution Approach 1:
The invention changes the development parameter by switching from alkaline development (conventional for positive resist) to organic solvent development. This parameter change enables the formation of extremely fine hole patterns with superior resolution by utilizing the different dissolution mechanisms of organic solvents, which can better resolve the fine features required for advanced semiconductor manufacturing
4Manufacturing precision
If photoresist film thickness is reduced for higher precision, then pattern transfer precision improves, but pattern collapse risk increases
Solution Approach 1:
The invention applies preliminary action by optimizing the resist lower layer film composition and contact angle before the photoresist pattern formation and development processes. This preliminary optimization of the substrate interface ensures that even when the photoresist film is made extremely thin for high precision, the pattern maintains sufficient mechanical strength and adhesion to prevent collapse during subsequent processing steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The silicon-containing resist lower layer film composition ensures pattern integrity by preventing collapse and maintaining low roughness, even in thin line patterns, and allows for successful transfer of photoresist patterns onto substrates with high precision, even with thinner films.
Implementation Method 1
A silicon-containing surface modifier with specific repeating units, such as those represented by general formula (A) and (B), is incorporated into a polysiloxane compound to form a resist lower layer film with a contact angle closer to that of the negatively developed upper layer resist, enhancing adhesion
Implementation Method 2
The composition also includes a solvent with a boiling point of 180°C or higher for improved film properties
Data Source
AI summary
The present invention provides a silicon-containing surface modifier containing one or more repeating units each represented by the following general formula (A), or one or more partial structures each represented by the following general formula (C):It is aimed at providing a resist lower layer film which is usable for a resist pattern formed of a hydrophilic organic compound to be obtained in a negative development.