Monocrystalline Silicon TFT Transfer for Glass Substrates
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current methods face challenges in manufacturing monocrystalline silicon thin film transistors on base substrates made of non-monocrystalline silicon materials like glass, due to stringent process conditions required for epitaxial thin film growth, temperature control, and vacuum degree, which limits the production of high carrier mobility transistors.
Innovation Solution
A method involving a monocrystalline silicon wafer with a bubble layer is used to transfer a monocrystalline silicon film onto a substrate, allowing for the formation of active layers without the need for direct growth on the substrate, thereby relaxing the process conditions and enabling production on non-monocrystalline silicon materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If direct epitaxial thin film growth is used to form monocrystalline silicon active layers on glass substrates, then high carrier mobility can be achieved, but the process conditions become too stringent (temperature control, vacuum degree) making manufacturing difficult
Solution Approach 1:
The patent introduces an intermediate transfer process using a carrier substrate. Monocrystalline silicon films are first grown on a monocrystalline silicon carrier substrate under controlled conditions, then transferred to the glass substrate. This intermediary approach allows the film growth to occur under ideal conditions on a compatible substrate, while the final application substrate can be glass or other non-monocrystalline materials, thus resolving the contradiction between achieving high carrier mobility and ease of manufacture.
2Ease of manufacture
If monocrystalline silicon films are grown directly on non-monocrystalline silicon substrates, then manufacturing simplicity is improved, but the process conditions (temperature, vacuum) become too stringent to control
Solution Approach 1:
The manufacturing process is segmented into two independent stages: (1) growing monocrystalline silicon films on a monocrystalline silicon carrier substrate under precisely controlled conditions, and (2) transferring the films to the final substrate. This segmentation allows the critical film growth process to occur under ideal conditions on a compatible substrate, while the transfer step enables flexibility in choosing the final substrate material, thus resolving the contradiction between manufacturing simplicity and process condition control.
3Ease of manufacture
If conventional TFT manufacturing methods are used on glass substrates, then ease of manufacture is maintained, but carrier mobility and conductivity are insufficient
Solution Approach 1:
The patent uses a monocrystalline silicon carrier substrate as an intermediary to enable the formation of high-quality monocrystalline silicon films that cannot be directly grown on glass substrates. The carrier substrate provides the necessary crystal structure for high-quality film growth, while the subsequent transfer process enables the final device to be fabricated on glass substrates, thus maintaining manufacturing ease while achieving high carrier mobility and conductivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the manufacturing process, reduces the difficulty of producing monocrystalline silicon thin film transistors on glass substrates, and achieves high carrier mobility, facilitating rapid mass production and improved performance in display products.
Implementation Method 1
forming a bubble layer between the first surface and the second surface of the monocrystalline silicon wafer, the bubble layer dividing the monocrystalline silicon wafer into two portions
Implementation Method 2
performing heat treatment on the monocrystalline silicon wafer and the temporary support base that are temporarily bonded together to break the monocrystalline silicon wafer at the bubble layer
Implementation Method 3
forming a first bonding adhesive layer on the surface, to be bonded with the monocrystalline silicon film, of the provided substrate
Data Source
AI summary
A method of manufacturing thin film transistor(s) includes: providing a monocrystalline silicon wafer, the monocrystalline silicon wafer including a first surface and a second surface that are opposite to each other; forming a bubble layer between the first surface and the second surface of the monocrystalline silicon wafer, the bubble layer dividing the monocrystalline silicon wafer into two portions arranged side by side in a direction perpendicular to the second surface, and a portion of the monocrystalline silicon wafer that is located between the bubble layer and the second surface being a monocrystalline silicon film having a target thickness; providing a substrate, and transferring the monocrystalline silicon film onto the substrate by breaking the monocrystalline silicon wafer at the bubble layer; and patterning the monocrystalline silicon film transferred to the substrate to form active layer(s) of the thin film transistor(s).