Silicon Thermal Conductivity Element for Semiconductor Packaging Heat Dissipation

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Solution Overview

Problem

The thermal conductivity of commonly used thermally-conductive materials in semiconductor package modules is not high enough, leading to inadequate heat dissipation and reduced stability and lifespan of semiconductor package modules.

Innovation Solution

A manufacturing method that includes soldering a working chip onto a wiring board and a silicon thermal conductivity element onto a heat-dissipating metal lid, with the silicon thermal conductivity element having thermal conduction channels and a thermally-conductive layer, and sandwiching the element between the chip and the lid to enhance heat dissipation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If commonly used thermally-conductive materials are used in semiconductor package modules, then the device complexity is reduced and ease of manufacture is improved, but the thermal conductivity is not high enough leading to inadequate heat dissipation

Engineering Contradiction:
Improveheat dissipation performanceVSAvoidstructure complexity
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The patent employs a composite heat dissipation structure consisting of a metal lid (high thermal conductivity material) combined with a silicon-based thermal conductivity element (dummy silicon chip with thermal conduction channels). This composite structure achieves superior heat dissipation performance by combining the advantages of different materials: the metal lid provides high thermal conductivity and structural support, while the silicon element with integrated thermal conduction channels enhances heat transfer efficiency without requiring complete redesign of the packaging structure.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent applies local quality improvement by integrating thermal conduction channels specifically within the silicon-based element that is positioned between the working chip and the metal lid. This localized enhancement of thermal conductivity at the critical heat transfer interface (where heat needs to be conducted most effectively) allows the rest of the structure to maintain simpler, more conventional designs. The thermal conduction channels are precisely where needed to address the heat dissipation bottleneck without complicating the entire device structure.

Inventive Principle:
Principle #3Local quality

2Reliability

If commonly used thermally-conductive materials are used in semiconductor package modules, then the manufacturing process is simplified, but the thermal resistance is high reducing stability and product life

Engineering Contradiction:
Improvestability and product lifeVSAvoidmanufacturing process complexity
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent incorporates thermal conduction channels into the silicon-based element during its fabrication process, before the element is installed in the final packaging assembly. This preliminary integration of the heat dissipation function into the silicon chip manufacturing process (using existing semiconductor fabrication techniques) avoids the need for separate, complex post-assembly modifications. The thermal conduction channels are formed as part of the chip structure itself, allowing the heat dissipation enhancement to be achieved through standard semiconductor manufacturing processes rather than requiring new manufacturing methodologies.

Inventive Principle:
Principle #10Preliminary action

3Temperature

If a silicon thermal conductivity element with thermal conduction channels is introduced, then thermal conductivity is improved by 45-65%, but the device structure becomes more complex

Engineering Contradiction:
Improvethermal conductivityVSAvoidstructural complexity
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The patent utilizes a dummy silicon chip as the thermal conductivity element, which replicates the basic structure and fabrication characteristics of functional silicon chips. This copying approach allows the thermal conduction channels to be integrated using the same manufacturing processes and material systems already established for silicon chip production. The dummy chip serves as a structural copy that performs the thermal conduction function without requiring entirely new device architectures, thereby limiting the increase in structural complexity to only what is necessary for the thermal conduction channels themselves.

Inventive Principle:
Principle #26Copying

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method significantly improves the thermal conductivity and heat dissipation performance of semiconductor packaging devices, reducing thermal resistance by approximately 45-65% compared to conventional devices.

Implementation Method 1

a silicon thermal conductivity element having thermal conduction channels and a thermally-conductive layer, and sandwiching the element between the chip and the lid to enhance heat dissipation

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

the first solder bumps are respectively soldered to the second solder bumps

Methodology Applied
Scientific EffectSoldering: Soldering

Data Source

PatentUS11658091B2Methods of manufacturing semiconductor packaging device and heat dissipation structure
Publication Date: 2023.05.23 GLOBAL UNICHIP CORPORATION
  • US11658091B2 patent drawing
  • US11658091B2 patent drawing
  • US11658091B2 patent drawing

AI summary

A manufacturing method of a semiconductor packaging device is provided, and the manufacturing method includes steps as follows. A working chip is soldered on one surface of a wiring board so that an working circuit inbuilt inside a chip body of the working chip is electrically connected to the wiring board. A silicon thermal conductivity element is soldered on one surface of a heat-dissipating metal lid. The heat-dissipating metal lid is fixedly covered on the wiring board such that the silicon thermal conductivity element is sandwiched between the chip body and the heat-dissipating metal lid, and the silicon thermal conductivity element is electrically isolated from the working circuit of the chip body and the wiring board.