Integrated Silicon Tunable Laser With On-Chip Wavelength Locking
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Legacy tunable laser designs are undesirable due to high cost, large size, reliability issues, and cross-talk, particularly in applications like coherent communications and LiDAR, where fully integrated solutions are needed for improved performance and reduced fabrication costs.
Innovation Solution
A fully integrated silicon (Si) tunable laser design incorporating a III-V/Si laser gain section, Si-based photodetectors for power and wavelength control, an integrated athermal wavelength locker, and an optical amplifier on a single chip, utilizing ring resonators and phase tuners to achieve wavelength tuning and locking.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If legacy tunable laser designs are used, then wavelength tuning capability is achieved, but device size and cost increase
Solution Approach 1:
The patent combines multiple laser components including the gain section, wavelength tuning mechanism, and output coupling into a single integrated laser device. This merging of previously separate components into one compact structure achieves wavelength tuning capability while significantly reducing device size and enabling full integration on a chip substrate.
2Adaptability or versatility
If legacy tunable laser designs are used, then wavelength tuning capability is achieved, but fabrication cost increases
Solution Approach 1:
The patent integrates multiple laser components into a single device that can be fabricated using standard semiconductor processing techniques. This merging approach enables batch fabrication and reduces the number of separate manufacturing steps, thereby lowering fabrication costs while maintaining wavelength tuning capability.
Solution Approach 2:
The patent employs a gain section with adjustable carrier density that can be tuned by changing injection current parameters. This parameter-based tuning mechanism replaces complex mechanical or optical tuning systems, simplifying the overall device structure and reducing fabrication costs through easier manufacturing and control.
3Adaptability or versatility
If legacy tunable laser designs are used, then wavelength tuning is possible, but reliability decreases
Solution Approach 1:
The patent integrates the wavelength tuning mechanism directly within the laser cavity structure, eliminating the need for external tuning components and complex alignment systems. This integration reduces the number of interfaces and moving parts, thereby improving device reliability while maintaining wavelength tuning capability.
4Adaptability or versatility
If legacy tunable laser designs are used, then wavelength tuning capability is provided, but cross-talk increases
Solution Approach 1:
The patent employs an asymmetric cavity design with different mirror reflectivities at the two ends, creating distinct optical modes with different spatial distributions. This local structural differentiation suppresses mode coupling and reduces cross-talk between adjacent wavelength channels, enabling better channel isolation in wavelength division multiplexing applications.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a compact, high-performance tunable laser with a wide wavelength tuning range, low fabrication costs, and robust wavelength locking, enhancing applications in coherent communications and LiDAR.
Implementation Method 1
a III-V/Si laser gain section
Implementation Method 2
Si-based photodetectors for power and wavelength control
Implementation Method 3
utilizing ring resonators and phase tuners to achieve wavelength tuning and locking
Implementation Method 4
utilizing ring resonators and phase tuners to achieve wavelength tuning and locking
Data Source
AI summary
Various embodiments described herein may relate to apparatuses, systems, techniques, and/or processes that are directed to tunable lasers. Specifically, embodiments herein may relate to chips that include both a tunable laser portion as well as a WLL portion on a same silicon substrate. Other embodiments may be described and/or claimed.


