Silicon Resist Underlayer Composition for Alkaline Film Removal
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Solution Overview
Problem
In advanced semiconductor manufacturing, dry etching and ashing treatments cause significant damage to substrates during multilayer processing, and there is a need for a resist underlayer film that can be easily removed with minimal residue using either dry or wet methods, particularly exhibiting solubility in alkaline chemical solutions.
Innovation Solution
A silicon-containing resist underlayer film forming composition using hydrolysis condensates of hydrolyzable silanes with succinic anhydride or phosphonic acid skeletons, and specific additives with cation and anion structures, allowing for solubility in basic chemical solutions and enhanced removability through both dry etching and wet methods.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If dry etching and ashing treatment are used for removing resist underlayer film, then the film can be removed, but significant damage is caused to the substrate
Solution Approach 1:
The patent changes the chemical composition parameters of the resist underlayer film by incorporating specific silicon-containing compounds with controlled ratios of organic groups and hydrolyzable groups. This enables the film to be selectively removed by wet etching with alkaline solutions rather than requiring aggressive dry etching or ashing processes, thereby preventing substrate damage while achieving effective film removal
Solution Approach 2:
The patent replaces the mechanical/physical removal methods (dry etching and ashing) with a chemical dissolution method using alkaline wet etching solutions. The silicon-containing resist underlayer film is designed to dissolve chemically in alkaline environments, substituting the harmful physical removal processes with a gentler chemical process that preserves substrate integrity
2Reliability
If conventional resist underlayer film is used, then the film provides necessary support, but it leaves considerable residue after dry etching
Solution Approach 1:
The patent modifies the chemical composition of the resist underlayer film by controlling the ratio of hydrolyzable groups to organic groups (specifically setting it between 0.3 and 1.5). This parameter optimization ensures complete dissolution in alkaline solutions without leaving residue, while still maintaining the film's structural support function during the lithography process
3Ease of operation
If hydrolyzable silane with succinic anhydride or phosphonic acid skeleton is used, then solubility in basic chemical solution is achieved, but storage stability must be maintained
Solution Approach 1:
The patent optimizes the ratio of hydrolyzable groups to organic groups within the specific range of 0.3 to 1.5, which balances two opposing requirements: having enough hydrolyzable groups to ensure good solubility and removability in basic chemical solutions, while maintaining enough organic groups to provide storage stability and prevent premature hydrolysis. This precise parameter control enables both ease of removal and storage stability
Solution Approach 2:
The patent creates a composite material system combining silicon-containing compounds with specific functional groups (succinic anhydride or phosphonic acid skeletons) and organic groups in controlled ratios. This composite structure integrates the hydrolyzability needed for removal with the stability needed for storage, resolving the contradiction between ease of operation and composition stability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition enables the formation of a resist underlayer film that can be easily peeled off with minimal substrate damage, maintaining storage stability and reducing residue, while allowing for effective removal using chemical solutions, thus improving semiconductor device manufacturing processes.
Implementation Method 1
a silicon-containing resist underlayer film forming composition containing at least one of a hydrolysis condensate of a hydrolyzable silane represented by Formula (1) below and a hydrolyzable silane mixture containing a hydrolyzable silane represented by Formula (2) below
Data Source
AI summary
A silicon-containing resist underlayer film forming composition that includes a hydrolysis condensate of a hydrolyzable silane represented by Formula (1) or a hydrolyzable silane mixture containing a hydrolyzable silane represented by Formula (2) is the silicon-containing resist underlayer film forming composition for forming a silicon-containing resist underlayer film soluble in a basic chemical solution.