Silicon Resist Underlayer Composition for CDU and Etch Transfer
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Solution Overview
Problem
In the context of advanced semiconductor manufacturing, there is a need for a composition that can form silicon-containing resist underlayer films with improved edge roughness (LWR) and critical dimension uniformity (CDU) to support high-precision patterning, as existing technologies face challenges in maintaining pattern quality due to limitations in light diffraction and exposure contrast.
Innovation Solution
A composition comprising a thermosetting silicon-containing material with specific repeating units and a betaine-type acid generator, along with a crosslinking catalyst, is used to form a silicon-containing resist underlayer film. This composition promotes high-density crosslinking and reduces acid diffusion, enhancing the adhesiveness and etching selectivity of the underlayer film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If light diffraction phenomenon is utilized for patterning, then exposure can be performed, but contrast of exposure light is lowered due to physical limit
Solution Approach 1:
The silicon-containing underlayer film acts as an intermediary between the exposure light and the resist. It contains a betaine-type acid generator that generates acid upon exposure, which then diffuses into the resist to trigger the chemical amplification reaction. This intermediary mechanism allows the system to overcome the low contrast caused by light diffraction by using chemical rather than optical contrast for pattern formation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves improved LWR and CDU in resist patterns, enabling high-precision semiconductor device manufacturing by maintaining pattern quality and allowing for precise transfer of patterns during dry etching processes.
Implementation Method 1
a betaine-type acid generator
Implementation Method 2
promotes high-density crosslinking
Data Source
AI summary
A composition for forming a silicon-containing resist underlayer film includes: a thermosetting silicon-containing material containing any one or more of a partial structure shown by the general formula (Sx-1), (Sx-2), and (Sx-3); and a compound shown by the general formula (P-0), where R1 represents an organic group that has or generates a silanol group, a hydroxy group, or a carboxy group; R2 and R3 are each independently the same as R1 or each represent a hydrogen atom or a monovalent substituent having 1 to 30 carbon atoms; R100 represents a divalent organic group substituted with a fluorine atom; R101 and R102 each independently represents a monovalent hydrocarbon group having 1 to 20 carbon atoms; R103 represents a divalent hydrocarbon group having 1 to 20 carbon atoms; and L104 represents a single bond or a divalent hydrocarbon group having 1 to 20 carbon atoms.