Silicon Resist Underlayer Composition for Faster EUV Exposure
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor device processing, particularly with advanced EUV lithography technology, there is a need to increase the sensitivity of resist materials to reduce exposure time and improve productivity.
Innovation Solution
A silicon-containing resist underlayer film-forming composition comprising polysiloxane, polyfunctional sulfonic acid or its salt, and a solvent, optionally with additional components like a curing catalyst or nitric acid, to enhance resist sensitivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional photoresist is used with silicon-containing resist underlayer film, then etching resistance is sufficient, but lithographic sensitivity is low and exposure time is long
Solution Approach 1:
The patent changes the chemical composition parameters of the resist underlayer film by incorporating polyfunctional sulfonic acid components with specific functional groups (carboxyl, hydroxyl, amino, or epoxide groups) in controlled amounts (0.1-10% by mass). This parameter modification enables the film to simultaneously provide etching resistance through silicon content while improving lithographic sensitivity through the chemical activity of the sulfonic acid derivatives, thereby reducing exposure time without sacrificing etching performance
Solution Approach 2:
The patent creates a composite resist underlayer material by combining polysiloxane base components with polyfunctional sulfonic acid derivatives. This composite structure integrates the etching resistance properties of silicon-containing materials with the sensitivity-enhancing chemical groups of sulfonic acid derivatives, achieving both sufficient etching resistance and improved lithographic sensitivity in a single material system
2Manufacturing precision
If resist film thickness is reduced for further miniaturization, then fine patterning capability is improved, but sensitivity increases are needed to maintain adequate exposure
Solution Approach 1:
The patent modifies the chemical composition of the resist underlayer film by incorporating polyfunctional sulfonic acid derivatives with specific functional groups that enhance chemical amplification efficiency. This parameter change in the underlayer chemistry improves the overall sensitivity of the resist system, enabling adequate exposure even when the photoresist film thickness is reduced for finer patterning applications
Solution Approach 2:
The resist underlayer film acts as an intermediary layer between the photoresist and substrate, with its modified composition (containing polyfunctional sulfonic acid derivatives) serving to enhance the chemical amplification process during exposure. This intermediary modification improves sensitivity transmission to the photoresist layer, allowing thinner films to achieve adequate patterning sensitivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition increases resist sensitivity, enabling faster exposure times and improved productivity in semiconductor processing.
Implementation Method 1
a component [B]: sulfuric acid, a polyfunctional sulfonic acid, or a salt thereof
Data Source
AI summary
A silicon-containing resist underlayer film-forming composition, containing: a component [A]: a polysiloxane; a component [B]: sulfuric acid, a polyfunctional sulfonic acid, or a salt thereof; and a component [C]: a solvent.