Silicon Resist Underlayer Composition for Higher EUV Sensitivity

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Solution Overview

Problem

In semiconductor device processing, particularly with advanced electron beam (EB) or extreme ultraviolet (EUV) lithography, there is a need to increase resist sensitivity to improve productivity by reducing exposure times.

Innovation Solution

A silicon-containing resist underlayer film-forming composition is developed, comprising polysiloxane with specific hydrolyzable silanes containing arylsulfonyl or arylthioester groups bonded to an aromatic ring, and a solvent, which enhances resist sensitivity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional polysiloxane compositions are used for resist underlayer films, then film formation is achieved, but resist sensitivity remains insufficient for advanced lithography

Engineering Contradiction:

Improveresist sensitivityVSAvoidexposure time

Core Design Contradiction:

ReliabilityVSProductivity

Solution Approach 1:

The patent modifies the chemical composition parameters of the polysiloxane by incorporating specific hydrolyzable silane groups (trialkoxysilyl, dialkoxysilyl, or alkoxysilyl) with controlled ratios. This parameter change enables the resist underlayer film to achieve higher resist sensitivity required for advanced lithography while maintaining film formation capability

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The invention creates a composite polysiloxane material combining multiple functional components: the base polysiloxane structure with integrated hydrolyzable silane groups and controlled water content. This composite structure achieves both adequate film formation and enhanced resist sensitivity for shortened exposure times

Inventive Principle:

Principle #40Composite materials

2Productivity

If exposure time is reduced to improve productivity, then manufacturing efficiency increases, but resist sensitivity requirements become more stringent

Engineering Contradiction:

Improveexposure timeVSAvoidresist sensitivity

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The patent adjusts key parameters including the ratio of hydrolyzable silane groups (0.1-10 mmol/g), water content (0.1-10 wt%), and silane group composition to optimize the resist underlayer film's sensitivity. These parameter changes enable successful patterning with reduced exposure times while maintaining film quality

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The invention utilizes the phase transition behavior of the polysiloxane composition during baking, where controlled water content enables proper hydrolysis and condensation reactions. This phase transition control ensures adequate crosslinking and film formation even with reduced exposure times

Inventive Principle:

Principle #36Phase transitions

3Reliability

If hydrolyzable silane groups are added to improve resist sensitivity, then sensitivity increases, but control over film formation becomes more difficult

Engineering Contradiction:

Improveresist sensitivityVSAvoidfilm formation control

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The patent precisely controls the concentration of hydrolyzable silane groups within specific ranges (0.1-10 mmol/g) and defines the ratio between different silane group types. This parameter control enables improved resist sensitivity while maintaining manageable film formation characteristics through optimized composition

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The invention introduces specific functional groups (trialkoxysilyl, dialkoxysilyl, or alkoxysilyl) at controlled local concentrations within the polysiloxane structure. This local quality control ensures that hydrolyzable groups are distributed optimally to enhance sensitivity without compromising overall film formation control

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The composition improves resist sensitivity, contributing to increased productivity in semiconductor processing by shortening exposure times.

Implementation Method 1

a polysiloxane containing a constituent unit derived from a hydrolyzable silane (A) having at least one of an arylsulfonyl group having an iodine atom directly bonded to an aromatic ring or an arylthioester group having an iodine atom directly bonded to an aromatic ring

Methodology Applied

Scientific EffectHydrolysis: Hydrolysis

Data Source

PatentEP4679175A1Composition for forming silicon-containing resist underlayer film

Publication Date: 2026.01.14 NISSAN CHEM CORP

AI summary

A silicon-containing resist underlayer film-forming composition including: a polysiloxane as a component [A]; and a solvent as a component [C], in which the polysiloxane contains a constituent unit derived from a hydrolyzable silane (A) having at least one of an arylsulfonyl group having an iodine atom directly bonded to an aromatic ring or an arylthioester group having an iodine atom directly bonded to an aromatic ring.