Silicon Resist Underlayer Composition for Peroxide-Free Stripping
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Solution Overview
Problem
Current silicon-containing resist underlayer films face challenges with delamination using fluoride ion-containing or alkaline stripping liquids, leading to substrate deterioration and limited process applicability, particularly when hydrogen peroxide is present, necessitating a material with high release characteristics without hydrogen peroxide.
Innovation Solution
A thermosetting silicon-containing compound with specific structural units and a crosslinking catalyst, such as sulfonium or iodonium salts, is used to form a silicon-containing film that exhibits both alkaline developer resistance and improved solubility in hydrogen peroxide-free alkaline stripping liquids, enabling effective patterning and delamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional silicon-containing resist underlayer films are used with fluoride ion-containing or alkaline stripping liquids, then delamination can be achieved, but substrate deterioration occurs and process applicability is limited
Solution Approach 1:
The patent modifies the chemical composition parameters of the silicon-containing compound by introducing specific structural units (Formulae 1-3) with controlled ratios of organic groups and hydrolyzable groups. This compositional parameter change enables the film to be selectively removed by mild alkaline stripping liquids without requiring aggressive fluoride ions or hydrogen peroxide, thus preventing substrate deterioration while maintaining delamination capability
Solution Approach 2:
The patent creates a composite silicon-containing compound structure combining multiple functional units: crosslinkable organic groups (for film formation and developer resistance), hydrolyzable groups (for controlled solubility in stripping liquid), and specific structural units (Formulae 1-3) that provide both alkaline resistance and selective solubility. This composite structure enables the film to exhibit contradictory properties of being resistant to alkaline developers yet soluble in alkaline stripping liquids
2Productivity
If hydrogen peroxide is added to alkaline stripping liquids, then delamination efficiency is improved, but substrate deterioration and limited process applicability occur
Solution Approach 1:
The patent extracts and eliminates the need for hydrogen peroxide from the stripping liquid composition by designing a silicon-containing compound that achieves adequate delamination efficiency through its inherent chemical structure. The specific structural units (Formulae 1-3) with appropriate hydrolyzable groups provide sufficient reactivity with mild alkaline stripping liquids, allowing removal of the crosslinked film without requiring the oxidizing power of hydrogen peroxide
Solution Approach 2:
The patent replaces expensive and hazardous hydrogen peroxide with a simple, safe, and inexpensive alkaline stripping liquid composition. The modified silicon-containing compound structure enables effective delamination using benign alkaline solutions, eliminating the need for costly and potentially damaging oxidizing agents
3Manufacturing precision
If thin photoresist films are used for high-resolution patterning, then resolution is improved, but pattern collapse occurs during development
Solution Approach 1:
The patent introduces a silicon-containing resist underlayer film as an intermediary support structure between the thin photoresist film and the substrate. This underlayer film provides mechanical support to prevent pattern collapse during development while having sufficient etch selectivity to be removed later. The specific structural units (Formulae 1-3) enable the underlayer to form a stable crosslinked network that reinforces thin photoresist patterns without interfering with the patterning process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The silicon-containing film demonstrates enhanced solubility in alkaline stripping liquids, preventing pattern collapse and allowing for precise pattern transfer with high etching selectivity, even with thin photoresist films, thus improving semiconductor manufacturing processes.
Implementation Method 1
A thermosetting silicon-containing compound with specific structural units and a crosslinking catalyst, such as sulfonium or iodonium salts, is used to form a silicon-containing film
Implementation Method 2
improved solubility in hydrogen peroxide-free alkaline stripping liquids
Data Source
Figure 1(a)~1(m)
AI summary
A thermosetting silicon-containing compound contains one or more of structural units shown by the following general formulae (Sx-1), (Sx-2), and (Sx-3): where R1 represents a monovalent organic group containing both a phenyl group optionally having a substituent and a non-aromatic ring having 3 to 10 carbon atoms; and R2, R3 each represent the R1 or a monovalent organic group having 1 to 30 carbon atoms. Thus, the present invention provides a thermosetting silicon-containing compound usable in a silicon-containing resist underlayer film material capable of achieving contradictory properties of having both alkaline developer resistance and improved solubility in an alkaline stripping liquid containing no hydrogen peroxide.