Silicon Wafer Texture-Etchant Composition for Solar Cell Efficiency

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Conventional etching compositions for texturing crystalline silicon wafers often result in poor pyramid formation, increased reflectance, and require additional chemicals and equipment, leading to decreased solar cell efficiency and increased costs.

Innovation Solution

An etching composition comprising 0.1 to 20 wt% of an alkaline compound, 0.1 to 50 wt% of a cyclic compound with a boiling point of 100 °C or more, and 0.00001 to 10 wt% of a silica-containing compound, along with water, which forms uniform fine pyramids on crystalline silicon wafers without the need for additional silicon particles or an aerating process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional etching compositions are used, then the etching process can be performed, but poor pyramid formation occurs and reflectance increases

Engineering Contradiction:
Improvepyramid formation qualityVSAvoidreflectance
Core Design Contradiction:
Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The patent modifies the chemical composition parameters of the etching solution by incorporating specific cyclic compounds (γ-butyrolactone, N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone) with defined boiling points and concentrations (5-50 vol%), along with controlled amounts of isopropyl alcohol (5-30 vol%) and potassium hydroxide (1-10 wt%). These parameter changes enable uniform pyramid formation with reduced reflectance, directly resolving the technical contradiction between etching capability and surface quality.

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If isopropyl alcohol is added during texturing process, then texture can be formed, but temperature gradient occurs and texture uniformity deteriorates

Engineering Contradiction:
Improvetexture uniformityVSAvoidtemperature gradient
Core Design Contradiction:
Manufacturing precisionVSTemperature

Solution Approach 1:

The patent pre-mixes isopropyl alcohol with the cyclic compound and water to create a homogeneous etching solution before the texturing process begins. This preliminary mixing ensures uniform distribution of isopropyl alcohol throughout the solution, preventing localized concentration variations that would cause temperature gradients during heating. The cyclic compound acts as a stabilizing agent that maintains solution homogeneity, thereby preserving texture uniformity throughout the etching process.

Inventive Principle:
Principle #10Preliminary action

3Ease of manufacture

If additional chemicals and equipment are used, then etching can be performed, but production costs increase

Engineering Contradiction:
Improveetching process capabilityVSAvoidproduction cost
Core Design Contradiction:
Ease of manufactureVSQuantity of substance

Solution Approach 1:

The patent creates a multi-functional etching solution where the cyclic compound serves multiple purposes: it acts as a co-solvent to dissolve potassium hydroxide, provides thermal stability during heating, controls the etching rate, and enhances pyramid formation quality. This eliminates the need for separate additives or aeration equipment, reducing both material costs and equipment investment while maintaining effective etching capability.

Inventive Principle:
Principle #6Universality (Multi-functionality)

4Productivity

If conventional etching composition is used, then etching can proceed, but a large amount of chemical is consumed

Engineering Contradiction:
Improvenumber of wafers treatedVSAvoidetching composition consumption
Core Design Contradiction:
ProductivityVSLoss of substance

Solution Approach 1:

The patent optimizes the concentration parameters of the etching solution components, particularly using 5-50 vol% cyclic compound and 1-10 wt% potassium hydroxide, which provides high etching efficiency at lower chemical consumption. The cyclic compound enhances the etching rate and uniformity, allowing effective treatment of more wafers per unit volume of etching solution, thereby reducing overall chemical consumption while increasing productivity.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The composition effectively reduces reflectance, increases light absorbance, and enhances the economic efficiency by treating a larger number of wafers with improved texture uniformity and reduced production costs.

Implementation Method 1

an etching composition for texturing a crystalline silicon wafer... comprising an alkaline compound

Methodology Applied
Scientific EffectChemical etching: Chemical Bonding

Implementation Method 2

a cyclic compound having a boiling point of 100 °C or more... does not require to introduce chemical during an aerating process

Methodology Applied
Scientific EffectEvaporation control: Evaporation

Implementation Method 3

a silica-containing compound... forms uniform fine pyramids on crystalline silicon wafers

Methodology Applied
Scientific EffectChemical deposition: Deposition (physical)

Implementation Method 4

the surface of a silicon wafer for a solar cell is textured in a fine pyramid shape... decreases the reflectance of incident light across a wide band of wavelengths to increase the intensity of previously-absorbed light

Methodology Applied
Scientific EffectLight absorption: Absorption (EM radiation)

Data Source

PatentEP2605289B1Texture-etchant composition for crystalline silicon wafer and method for texture-etching
Publication Date: 2019.10.02 DONGWOO FINE CHEM CO LTD
  • EP2605289B1 patent drawingFigure 1
  • EP2605289B1 patent drawingFigure 2
  • EP2605289B1 patent drawingFigure 3

AI summary

Disclosed herein is an etching composition for texturing a crystalline silicon wafer, comprising, based on a total amount of the composition: (A) 0.1 to 20 wt% of an alkaline compound; (B) 0.1 to 50 wt% of a cyclic compound having a boiling point of 100°C or more; (C) 0.00001 to 10 wt% of a silica-containing compound; and (D) residual water. The etching composition can maximize the absorbance of light of the surface of a crystalline silicon wafer.