Silicon Wafer Thinning End Point Structure

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Solution Overview

Problem

Conventional methods for thinning semiconductor wafers risk damaging structures formed in the wafer due to inconsistent thickness, requiring sacrificial wafers to determine the grinding extent, which is not entirely satisfactory.

Innovation Solution

A method and system that involves creating an end point structure within the wafer, extending deeper towards the backside than the desired structure, allowing the grinding process to stop at this point without damaging the desired structures, using materials like tungsten or copper for the end structure to halt the grinding wheel.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If a wafer is thinned too much to achieve smaller size and lower cost, then productivity and cost efficiency are improved, but structures formed in the wafer may be damaged

Engineering Contradiction:
Improvewafer thinning efficiencyVSAvoidstructure integrity
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

An end structure is formed in advance during the integrated circuit fabrication process, extending deeper than the desired structures. This preliminary structure serves as a predetermined stop point that guides the grinding process, allowing aggressive thinning without risking damage to the actual device structures.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The end structure acts as an intermediary element between the grinding wheel and the desired structures. It absorbs the mechanical interaction, providing a controlled interface that stops the grinding process before the wheel contacts the sensitive device structures, thus protecting them while enabling efficient thinning.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Manufacturing precision

If sacrificial wafers are used to determine the extent of grinding, then manufacturing precision is improved, but device complexity and process time increase

Engineering Contradiction:
Improvegrinding depth controlVSAvoidprocess complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The function of determining grinding depth is extracted from a separate sacrificial wafer process and integrated directly into the production wafer through the end structure. This eliminates the need for separate test wafers and iterative adjustments, reducing process complexity while maintaining precise depth control.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The production wafer itself provides the grinding stop reference through its own end structure, rather than requiring external sacrificial wafers. The wafer is self-sufficient in defining its own processing parameters, eliminating the need for separate reference samples and simplifying the overall process.

Inventive Principle:
Principle #25Self-service

3Ease of operation

If predetermined thickness is ground off to simplify the process, then ease of operation is improved, but manufacturing precision deteriorates due to wafer thickness variations

Engineering Contradiction:
Improvegrinding process simplicityVSAvoidfinal thickness consistency
Core Design Contradiction:
Ease of operationVSManufacturing precision

Solution Approach 1:

Instead of applying a uniform predetermined thickness removal across all wafers, the end structure provides a localized reference point at the specific depth where grinding should stop. This allows each wafer to be processed according to its own characteristics while maintaining consistent final thickness, combining simplicity with precision.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables repeatable and precise wafer thinning without damaging internal structures, eliminating the need for sacrificial wafers and accommodating variations in wafer thickness and grinding tape, ensuring consistent results.

Implementation Method 1

grinding away said substrate by using a grinding wheel

Methodology Applied
Scientific EffectAbrasion: Abrasion

Data Source

PatentUS7498236B2Silicon wafer thinning end point method
Publication Date: 2009.03.03 INTERNATIONAL BUSINESS MACHINE CORPORATION
  • US7498236B2 patent drawing
  • US7498236B2 patent drawing
  • US7498236B2 patent drawing

AI summary

Disclosed are a method of and system for fabricating a semiconductor wafer. The method comprises the steps of providing a silicon wafer having a front side an a back side, building an integrated circuit on the front side of the wafer, and thereafter removing substrate from the back side of the silicon wafer. The building step includes the steps of forming a desired structure in the wafer, and forming an end structure in the wafer, said end structure extending to a greater depth, toward the back side of the wafer, than the desired structure. Also, the removing step includes the step of removing said substrate only to the end structure, whereby no part of the desired structure is removed during the removing step.