Silicon-Based Wire Optical Waveguide Self-Aligning Curvature
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Solution Overview
Problem
The existing methods for three-dimensionally curving silicon-based wire optical waveguides suffer from high optical transmission loss due to high-energy ion irradiation, making them impractical for use in silicon-based wire optical waveguides, and are challenging to implement, especially when the waveguide is integrated with metallic lines on a circuit board.
Innovation Solution
A method involving the selective removal of the supporting layer under the end portion of the silicon-based wire optical waveguide, forming a protective film, and implanting ions in a specific direction to curve the waveguide in a self-aligning manner, while using a low refractive index material layer to embed the curved end portion and protect it from ion invasion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If high-energy ion irradiation is used to curve the silicon-based wire optical waveguide, then the waveguide can be three-dimensionally curved for out-of-plane optical coupling, but optical transmission loss increases significantly
Solution Approach 1:
The waveguide structure is segmented into multiple layers: the silicon-based wire optical waveguide layer, the supporting layer, and the protective film layer. This segmentation allows selective ion irradiation of only the supporting layer while protecting the waveguide layer, thereby achieving curvature without significant optical transmission loss
Solution Approach 2:
The protective film acts as an intermediary between the ion beam and the silicon-based wire optical waveguide. It allows the ion beam to pass through and curve the supporting layer while preventing direct ion damage to the waveguide, thus enabling curvature while maintaining low optical transmission loss
2Manufacturing precision
If the supporting layer is removed under the end portion to enable self-aligning curvature, then precise curvature control is achieved, but the waveguide becomes more vulnerable to ion invasion
Solution Approach 1:
The protective film is formed on the waveguide layer before ion irradiation begins. This preliminary protective action ensures that when the supporting layer is selectively removed and ion irradiation follows, the waveguide is already protected from ion invasion while maintaining the ability to achieve precise self-aligning curvature
Solution Approach 2:
The protective film is applied locally to cover only the waveguide region, providing targeted protection where needed. This allows the supporting layer to be removed in specific areas for curvature control while maintaining protection of the waveguide from ion damage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces optical transmission loss, allows for precise curvature control, enables miniaturization, and allows the method to be applied to waveguides integrated with metallic lines, achieving high mass productivity and efficient optical coupling.
Implementation Method 1
forming a protective film selectively on the silicon-based wire optical waveguide exclusive of the end portion... at least the silicon-based wire optical waveguide exclusive of the whole or a part of the end portion is protected from invasion of ions with the protective film
Implementation Method 2
implanting ions to the silicon-based wire optical waveguide in a particular direction, so as to curve the end portion of the silicon-based wire optical waveguide to the particular direction in a self-alignment manner
Implementation Method 3
forming second protective film on the end portion of the silicon-based wire optical waveguide and the protective film... using a low refractive index material layer to embed the curved end portion and protect it from ion invasion
Data Source
AI summary
A method is provided for processing a silicon-based wire optical waveguide, by which an optical transmission loss of the silicon-based wire optical waveguide due to ion irradiation with high energy is suppressed, and an end portion of the silicon-based wire optical waveguide that is three-dimensionally curved in a self-aligning manner is obtained. According to the method a protective film is selectively formed on the silicon-based wire optical waveguide exclusive of the end portion of the silicon-based wire optical waveguide; and ions are implanted to the silicon-based wire optical waveguide in a particular direction, so as to curve the end portion of the silicon-based wire optical waveguide to the particular direction in a self-alignment manner.